High On-Current 2D nFET of 390 \mu A/\mu m at V_{DS = 1V using Monolayer CVD MoS2 without Intentional Doping

Ang Sheng Chou; Pin Chun Shen; Chao Ching Cheng; Li Syuan Lu; Wei Chen Chueh; Ming Yang Li; Gregory Pitner; Wen Hao Chang; Chih I. Wu; Jing Kong; Lain Jong Li; H. S.Philip Wong

doi:10.1109/VLSITechnology18217.2020.9265040

High On-Current 2D nFET of 390 \mu A/\mu m at V_{DS = 1V using Monolayer CVD MoS2 without Intentional Doping

Ang Sheng Chou, Pin Chun Shen, Chao Ching Cheng, Li Syuan Lu, Wei Chen Chueh, Ming Yang Li, Gregory Pitner, Wen Hao Chang, Chih I. Wu, Jing Kong, Lain Jong Li, H. S.Philip Wong

研究成果: Conference contribution › 同行評審

14 引文斯高帕斯（Scopus）

摘要

We demonstrate the highest nFET current of 390 μA/μm at VDS = 1 V based on CVD Mos2 mono layers without intentional doping. The transistor exhibits good subthreshold swing of 109 m V/ decade, large ION IOFF ratio of 4*108, and nearly zero DIBL. The high on-current achieved in monolayer Mos2 nFET is mainly attributed to the thin EOT 2 nm of HfOx gate oxide, short gate length of 100 nm, and low contact resistance 1.1 kω- um.

原文	English
主出版物標題	2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020 - Proceedings
發行者	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子）	9781728164601
DOIs	https://doi.org/10.1109/VLSITechnology18217.2020.9265040
出版狀態	Published - 6月 2020
事件	2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020 - Honolulu, 美國持續時間: 16 6月 2020 → 19 6月 2020

出版系列

名字	Digest of Technical Papers - Symposium on VLSI Technology
卷	2020-June
ISSN（列印）	0743-1562

Conference

Conference	2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020
國家/地區	美國
城市	Honolulu
期間	16/06/20 → 19/06/20

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10.1109/VLSITechnology18217.2020.9265040

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Link to publication in Scopus

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Chou, A. S., Shen, P. C., Cheng, C. C., Lu, L. S., Chueh, W. C., Li, M. Y., Pitner, G., Chang, W. H., Wu, C. I., Kong, J., Li, L. J., & Wong, H. S. P. (2020). High On-Current 2D nFET of 390 \mu A/\mu m at V_{DS = 1V using Monolayer CVD MoS2 without Intentional Doping. 於 2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020 - Proceedings 文章 9265040 (Digest of Technical Papers - Symposium on VLSI Technology; 卷 2020-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSITechnology18217.2020.9265040

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title = "High On-Current 2D nFET of 390 \mu A/\mu m at V_{DS = 1V using Monolayer CVD MoS2 without Intentional Doping",

abstract = "We demonstrate the highest nFET current of 390 μA/μm at VDS = 1 V based on CVD Mos2 mono layers without intentional doping. The transistor exhibits good subthreshold swing of 109 m V/ decade, large ION IOFF ratio of 4*108, and nearly zero DIBL. The high on-current achieved in monolayer Mos2 nFET is mainly attributed to the thin EOT 2 nm of HfOx gate oxide, short gate length of 100 nm, and low contact resistance 1.1 kω- um. ",

author = "Chou, {Ang Sheng} and Shen, {Pin Chun} and Cheng, {Chao Ching} and Lu, {Li Syuan} and Chueh, {Wei Chen} and Li, {Ming Yang} and Gregory Pitner and Chang, {Wen Hao} and Wu, {Chih I.} and Jing Kong and Li, {Lain Jong} and Wong, {H. S.Philip}",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; 2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020 ; Conference date: 16-06-2020 Through 19-06-2020",

year = "2020",

month = jun,

doi = "10.1109/VLSITechnology18217.2020.9265040",

language = "English",

series = "Digest of Technical Papers - Symposium on VLSI Technology",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020 - Proceedings",

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}

Chou, AS, Shen, PC, Cheng, CC, Lu, LS, Chueh, WC, Li, MY, Pitner, G, Chang, WH, Wu, CI, Kong, J, Li, LJ & Wong, HSP 2020, High On-Current 2D nFET of 390 \mu A/\mu m at V_{DS = 1V using Monolayer CVD MoS2 without Intentional Doping. 於 2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020 - Proceedings., 9265040, Digest of Technical Papers - Symposium on VLSI Technology, 卷 2020-June, Institute of Electrical and Electronics Engineers Inc., 2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020, Honolulu, 美國, 16/06/20. https://doi.org/10.1109/VLSITechnology18217.2020.9265040

High On-Current 2D nFET of 390 \mu A/\mu m at V_{DS = 1V using Monolayer CVD MoS2 without Intentional Doping. / Chou, Ang Sheng; Shen, Pin Chun; Cheng, Chao Ching 等.
2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2020. 9265040 (Digest of Technical Papers - Symposium on VLSI Technology; 卷 2020-June).

研究成果: Conference contribution › 同行評審

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T1 - High On-Current 2D nFET of 390 \mu A/\mu m at V_{DS = 1V using Monolayer CVD MoS2 without Intentional Doping

AU - Chou, Ang Sheng

AU - Shen, Pin Chun

AU - Cheng, Chao Ching

AU - Lu, Li Syuan

AU - Chueh, Wei Chen

AU - Li, Ming Yang

AU - Pitner, Gregory

AU - Chang, Wen Hao

AU - Wu, Chih I.

AU - Kong, Jing

AU - Li, Lain Jong

AU - Wong, H. S.Philip

PY - 2020/6

Y1 - 2020/6

N2 - We demonstrate the highest nFET current of 390 μA/μm at VDS = 1 V based on CVD Mos2 mono layers without intentional doping. The transistor exhibits good subthreshold swing of 109 m V/ decade, large ION IOFF ratio of 4*108, and nearly zero DIBL. The high on-current achieved in monolayer Mos2 nFET is mainly attributed to the thin EOT 2 nm of HfOx gate oxide, short gate length of 100 nm, and low contact resistance 1.1 kω- um.

AB - We demonstrate the highest nFET current of 390 μA/μm at VDS = 1 V based on CVD Mos2 mono layers without intentional doping. The transistor exhibits good subthreshold swing of 109 m V/ decade, large ION IOFF ratio of 4*108, and nearly zero DIBL. The high on-current achieved in monolayer Mos2 nFET is mainly attributed to the thin EOT 2 nm of HfOx gate oxide, short gate length of 100 nm, and low contact resistance 1.1 kω- um.

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M3 - Conference contribution

AN - SCOPUS:85098112157

T3 - Digest of Technical Papers - Symposium on VLSI Technology

BT - 2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020

Y2 - 16 June 2020 through 19 June 2020

ER -

Chou AS, Shen PC, Cheng CC, Lu LS, Chueh WC, Li MY 等. High On-Current 2D nFET of 390 \mu A/\mu m at V_{DS = 1V using Monolayer CVD MoS2 without Intentional Doping. 於 2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2020. 9265040. (Digest of Technical Papers - Symposium on VLSI Technology). doi: 10.1109/VLSITechnology18217.2020.9265040

High On-Current 2D nFET of 390 \mu A/\mu m at V_{DS = 1V using Monolayer CVD MoS2 without Intentional Doping

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