High On-Current 2D nFET of 390 \mu A/\mu m at V_{DS = 1V using Monolayer CVD MoS2 without Intentional Doping

Ang Sheng Chou, Pin Chun Shen, Chao Ching Cheng, Li Syuan Lu, Wei Chen Chueh, Ming Yang Li, Gregory Pitner, Wen Hao Chang, Chih I. Wu, Jing Kong, Lain Jong Li, H. S.Philip Wong

研究成果: Conference contribution同行評審

3 引文 斯高帕斯(Scopus)

摘要

We demonstrate the highest nFET current of 390 μA/μm at VDS = 1 V based on CVD Mos2 mono layers without intentional doping. The transistor exhibits good subthreshold swing of 109 m V/ decade, large ION IOFF ratio of 4*108, and nearly zero DIBL. The high on-current achieved in monolayer Mos2 nFET is mainly attributed to the thin EOT 2 nm of HfOx gate oxide, short gate length of 100 nm, and low contact resistance 1.1 kω- um.

原文English
主出版物標題2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020 - Proceedings
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9781728164601
DOIs
出版狀態Published - 六月 2020
事件2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020 - Honolulu, United States
持續時間: 16 六月 202019 六月 2020

出版系列

名字Digest of Technical Papers - Symposium on VLSI Technology
2020-June
ISSN(列印)0743-1562

Conference

Conference2020 IEEE Symposium on VLSI Technology, VLSI Technology 2020
國家/地區United States
城市Honolulu
期間16/06/2019/06/20

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