High nitrogen content InGaAsN/GaAs single quantum well for 1.55 μm applications grown by molecular beam epitaxy

Keyphrases

• Molecular Beam Epitaxy 100%
• Gallium Arsenide 100%
• Single Quantum Well 100%
• High Nitrogen Content 100%
• InGaAsN 100%
• Nitrogen Composition 50%
• GaAs Substrate 33%
• X-ray Diffractometer 16%
• Low Temperature 16%
• Crystal Quality 16%
• Photoluminescence Intensity 16%
• Nitrogen Source 16%
• Lattice Mismatch 16%
• Room Temperature 16%
• Phase Separation 16%
• InGaAs 16%
• Growth Temperature 16%
• Solid Source Molecular Beam Epitaxy 16%
• Peak Wavelength 16%
• Dynamic Simulation 16%
• Nonradiative Recombination 16%
• Optical Quality 16%
• Nitrogen Incorporation 16%
• Radio Frequency Plasma 16%
• QW Laser 16%

Engineering

• Gallium Arsenide 100%
• Quantum Well 100%
• Nitrogen Composition 60%
• Gaas Substrate 40%
• Low-Temperature 20%
• Crystal Quality 20%
• Radio Frequency 20%
• Room Temperature 20%
• Lattice Mismatch 20%
• Indium Gallium Arsenide 20%
• Growth Temperature 20%
• Phase Separation 20%
• Optical Quality 20%
• Computer Simulation 20%