High mobility tungsten-doped thin-film transistor on polyimide substrate with low temperature process

Dun Bao Ruan, Po-Tsun Liu*, Yu Chuan Chiu, Min Chin Yu, Kai Jhih Gan, Ta Chun Chien, Po Yi Kuo, Simon M. Sze

*此作品的通信作者

研究成果: Conference contribution同行評審

2 引文 斯高帕斯(Scopus)

摘要

A novel high mobility channel material, amorphous tungsten doped indium-oxide, is used as the active layer of flexible TFT, which is fabricated on a transparent polyimide under a low temperature process. The effects of channel thickness are investigated as well in this work. The flexible TFT with a suitable thickness of IWO film shows a high carrier mobility and low sub-threshold swing. The improvement can be attributed to increased donor-like oxygen vacancy with the thickness of channel layer increased.

原文English
主出版物標題Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018
發行者Institute of Electrical and Electronics Engineers Inc.
頁面1-2
頁數2
ISBN(電子)9781538614457
DOIs
出版狀態Published - 5月 2018
事件7th International Symposium on Next-Generation Electronics, ISNE 2018 - Taipei, Taiwan
持續時間: 7 5月 20189 5月 2018

出版系列

名字Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018

Conference

Conference7th International Symposium on Next-Generation Electronics, ISNE 2018
國家/地區Taiwan
城市Taipei
期間7/05/189/05/18

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