High-mobility polymer space-charge-limited transistor with grid-induced crystallinity

Yu Chiang Chao; Mu Chun Niu; Hsiao-Wen Zan; Hsin-Fei Meng; Ming Che Ku

doi:10.1016/j.orgel.2010.09.023

High-mobility polymer space-charge-limited transistor with grid-induced crystallinity

Yu Chiang Chao
, Mu Chun Niu
, Hsiao-Wen Zan^*
, Hsin-Fei Meng
, Ming Che Ku

^*此作品的通信作者

研究成果: Article › 同行評審

19 引文斯高帕斯（Scopus）

摘要

The vertical mobility of a polymer film prepared on a textured substrate is enhanced from 10^-5 cm²/Vs to 10^-3 cm ²/Vs by a slow drying process which is unattainable in planar substrate. Highly ordered structure is observed for polymer film treated with high-boiling-point solvent and slow solvent annealing. The enhanced vertical mobility enables the polymer space-charge-limited transistor (SCLT) capable of outputting current density as high as 100 mA/cm² while maintaining good current gain and on-off ratio. Such vertical transistor is able to drive high-power devices or mechanical actuator in large-area and flexible array.

原文	English
頁（從 - 到）	78-82
頁數	5
期刊	Organic Electronics
卷	12
發行號	1
DOIs	https://doi.org/10.1016/j.orgel.2010.09.023
出版狀態	Published - 1月 2011

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10.1016/j.orgel.2010.09.023

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title = "High-mobility polymer space-charge-limited transistor with grid-induced crystallinity",

abstract = "The vertical mobility of a polymer film prepared on a textured substrate is enhanced from 10-5 cm2/Vs to 10-3 cm 2/Vs by a slow drying process which is unattainable in planar substrate. Highly ordered structure is observed for polymer film treated with high-boiling-point solvent and slow solvent annealing. The enhanced vertical mobility enables the polymer space-charge-limited transistor (SCLT) capable of outputting current density as high as 100 mA/cm2 while maintaining good current gain and on-off ratio. Such vertical transistor is able to drive high-power devices or mechanical actuator in large-area and flexible array.",

keywords = "Space-charge-limited current, Vertical transistor",

author = "Chao, \{Yu Chiang\} and Niu, \{Mu Chun\} and Hsiao-Wen Zan and Hsin-Fei Meng and Ku, \{Ming Che\}",

year = "2011",

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doi = "10.1016/j.orgel.2010.09.023",

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AU - Chao, Yu Chiang

AU - Niu, Mu Chun

AU - Zan, Hsiao-Wen

AU - Meng, Hsin-Fei

AU - Ku, Ming Che

PY - 2011/1

Y1 - 2011/1

N2 - The vertical mobility of a polymer film prepared on a textured substrate is enhanced from 10-5 cm2/Vs to 10-3 cm 2/Vs by a slow drying process which is unattainable in planar substrate. Highly ordered structure is observed for polymer film treated with high-boiling-point solvent and slow solvent annealing. The enhanced vertical mobility enables the polymer space-charge-limited transistor (SCLT) capable of outputting current density as high as 100 mA/cm2 while maintaining good current gain and on-off ratio. Such vertical transistor is able to drive high-power devices or mechanical actuator in large-area and flexible array.

AB - The vertical mobility of a polymer film prepared on a textured substrate is enhanced from 10-5 cm2/Vs to 10-3 cm 2/Vs by a slow drying process which is unattainable in planar substrate. Highly ordered structure is observed for polymer film treated with high-boiling-point solvent and slow solvent annealing. The enhanced vertical mobility enables the polymer space-charge-limited transistor (SCLT) capable of outputting current density as high as 100 mA/cm2 while maintaining good current gain and on-off ratio. Such vertical transistor is able to drive high-power devices or mechanical actuator in large-area and flexible array.

KW - Space-charge-limited current

KW - Vertical transistor

UR - https://www.scopus.com/pages/publications/78249245435

U2 - 10.1016/j.orgel.2010.09.023

DO - 10.1016/j.orgel.2010.09.023

M3 - Article

AN - SCOPUS:78249245435

SN - 1566-1199

VL - 12

SP - 78

EP - 82

JO - Organic Electronics

JF - Organic Electronics

IS - 1

ER -

High-mobility polymer space-charge-limited transistor with grid-induced crystallinity

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