摘要
One technology bottleneck for system-on-panel (SoP) is the lacking of high-performance p-type thin-film transistor (pTFT). Using high dielectric-constant (high-κ) gate materials with optimized processes, high hole and electron field-effect mobility of 7.6 and 345 cm2/Vs were measured in pTFT and nTFT, respectively. These high mobility devices on SiO2 are the enabling technology for SoP and crucial for three-dimensional brain-mimicking integrated circuit (IC)-the technology trend for IC after reaching the quantum-mechanical limit soon.
原文 | English |
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頁(從 - 到) | 292-294 |
頁數 | 3 |
期刊 | Digest of Technical Papers - SID International Symposium |
卷 | 52 |
發行號 | S1 |
DOIs | |
出版狀態 | Published - 2月 2021 |
事件 | International Conference on Display Technology, ICDT 2020 - Wuhan, China 持續時間: 18 10月 2020 → 21 10月 2020 |