High mobility high on/off ratio C-V dispersion-free Ge n-MOSFETs and their strain response

Yen Chun Fu; William Hsu; Yen Ting Chen; Huang Siang Lan; Cheng Han Lee; Hung Chih Chang; Hou Yun Lee; Guang Li Luo; Chao-Hsin Chien; C. W. Liu; Chen-Ming Hu; Fu Liang Yang

doi:10.1109/IEDM.2010.5703388

High mobility high on/off ratio C-V dispersion-free Ge n-MOSFETs and their strain response

Yen Chun Fu^*, William Hsu, Yen Ting Chen, Huang Siang Lan, Cheng Han Lee, Hung Chih Chang, Hou Yun Lee, Guang Li Luo, Chao-Hsin Chien, C. W. Liu, Chen-Ming Hu, Fu Liang Yang

^*此作品的通信作者

國際半導體產業學院

研究成果: Conference contribution › 同行評審

12 引文斯高帕斯（Scopus）

摘要

The record high peak mobility of ∼1050 cm²/V-s on (001) Ge substrate is demonstrated in NFET. High-quality Ge/GeO₂ interface is ensured by rapid thermal oxidation (RTO) and remote ozone plasma treatment. The best achieved subthreshold swing is 150mV/dec and the on/off ratio is 2×10⁴. The low defective n⁺/p junction produced a record high on/off ratio of 2×10⁵, an ideality factor of 1.05 and strong electroluminescence. For the first time, it is reported that the uniaxial 〈110〉 tensile strain (0.08%) on 〈110〉 channel direction gives the best mobility enhancement (12%) among the different strain configurations, consistent with theoretical calculation.

原文	English
主出版物標題	2010 IEEE International Electron Devices Meeting, IEDM 2010
頁面	18.5.1-18.5.4
DOIs	https://doi.org/10.1109/IEDM.2010.5703388
出版狀態	Published - 2010
事件	2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, 美國持續時間: 6 12月 2010 → 8 12月 2010

出版系列

名字	Technical Digest - International Electron Devices Meeting, IEDM
ISSN（列印）	0163-1918

Conference

Conference	2010 IEEE International Electron Devices Meeting, IEDM 2010
國家/地區	美國
城市	San Francisco, CA
期間	6/12/10 → 8/12/10

存取文件

10.1109/IEDM.2010.5703388

其它文件與鏈接

Link to publication in Scopus

引用此

Fu, Y. C., Hsu, W., Chen, Y. T., Lan, H. S., Lee, C. H., Chang, H. C., Lee, H. Y., Luo, G. L., Chien, C.-H., Liu, C. W., Hu, C.-M., & Yang, F. L. (2010). High mobility high on/off ratio C-V dispersion-free Ge n-MOSFETs and their strain response. 於 2010 IEEE International Electron Devices Meeting, IEDM 2010 (頁 18.5.1-18.5.4). 文章 5703388 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2010.5703388

@inproceedings{d30e7be39e16432bb343181fef344526,

title = "High mobility high on/off ratio C-V dispersion-free Ge n-MOSFETs and their strain response",

abstract = "The record high peak mobility of ∼1050 cm2/V-s on (001) Ge substrate is demonstrated in NFET. High-quality Ge/GeO2 interface is ensured by rapid thermal oxidation (RTO) and remote ozone plasma treatment. The best achieved subthreshold swing is 150mV/dec and the on/off ratio is 2×104. The low defective n+/p junction produced a record high on/off ratio of 2×105, an ideality factor of 1.05 and strong electroluminescence. For the first time, it is reported that the uniaxial 〈110〉 tensile strain (0.08%) on 〈110〉 channel direction gives the best mobility enhancement (12%) among the different strain configurations, consistent with theoretical calculation.",

author = "Fu, {Yen Chun} and William Hsu and Chen, {Yen Ting} and Lan, {Huang Siang} and Lee, {Cheng Han} and Chang, {Hung Chih} and Lee, {Hou Yun} and Luo, {Guang Li} and Chao-Hsin Chien and Liu, {C. W.} and Chen-Ming Hu and Yang, {Fu Liang}",

year = "2010",

doi = "10.1109/IEDM.2010.5703388",

language = "English",

isbn = "9781424474196",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "18.5.1--18.5.4",

booktitle = "2010 IEEE International Electron Devices Meeting, IEDM 2010",

note = "2010 IEEE International Electron Devices Meeting, IEDM 2010 ; Conference date: 06-12-2010 Through 08-12-2010",

}

Fu, YC, Hsu, W, Chen, YT, Lan, HS, Lee, CH, Chang, HC, Lee, HY, Luo, GL, Chien, C-H, Liu, CW, Hu, C-M & Yang, FL 2010, High mobility high on/off ratio C-V dispersion-free Ge n-MOSFETs and their strain response. 於 2010 IEEE International Electron Devices Meeting, IEDM 2010., 5703388, Technical Digest - International Electron Devices Meeting, IEDM, 頁 18.5.1-18.5.4, 2010 IEEE International Electron Devices Meeting, IEDM 2010, San Francisco, CA, 美國, 6/12/10. https://doi.org/10.1109/IEDM.2010.5703388

TY - GEN

T1 - High mobility high on/off ratio C-V dispersion-free Ge n-MOSFETs and their strain response

AU - Fu, Yen Chun

AU - Hsu, William

AU - Chen, Yen Ting

AU - Lan, Huang Siang

AU - Lee, Cheng Han

AU - Chang, Hung Chih

AU - Lee, Hou Yun

AU - Luo, Guang Li

AU - Chien, Chao-Hsin

AU - Liu, C. W.

AU - Hu, Chen-Ming

AU - Yang, Fu Liang

PY - 2010

Y1 - 2010

N2 - The record high peak mobility of ∼1050 cm2/V-s on (001) Ge substrate is demonstrated in NFET. High-quality Ge/GeO2 interface is ensured by rapid thermal oxidation (RTO) and remote ozone plasma treatment. The best achieved subthreshold swing is 150mV/dec and the on/off ratio is 2×104. The low defective n+/p junction produced a record high on/off ratio of 2×105, an ideality factor of 1.05 and strong electroluminescence. For the first time, it is reported that the uniaxial 〈110〉 tensile strain (0.08%) on 〈110〉 channel direction gives the best mobility enhancement (12%) among the different strain configurations, consistent with theoretical calculation.

AB - The record high peak mobility of ∼1050 cm2/V-s on (001) Ge substrate is demonstrated in NFET. High-quality Ge/GeO2 interface is ensured by rapid thermal oxidation (RTO) and remote ozone plasma treatment. The best achieved subthreshold swing is 150mV/dec and the on/off ratio is 2×104. The low defective n+/p junction produced a record high on/off ratio of 2×105, an ideality factor of 1.05 and strong electroluminescence. For the first time, it is reported that the uniaxial 〈110〉 tensile strain (0.08%) on 〈110〉 channel direction gives the best mobility enhancement (12%) among the different strain configurations, consistent with theoretical calculation.

UR - http://www.scopus.com/inward/record.url?scp=79951815805&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2010.5703388

DO - 10.1109/IEDM.2010.5703388

M3 - Conference contribution

AN - SCOPUS:79951815805

SN - 9781424474196

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 18.5.1-18.5.4

BT - 2010 IEEE International Electron Devices Meeting, IEDM 2010

T2 - 2010 IEEE International Electron Devices Meeting, IEDM 2010

Y2 - 6 December 2010 through 8 December 2010

ER -

High mobility high on/off ratio C-V dispersion-free Ge n-MOSFETs and their strain response

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