High linearity AlGaN/GaN HEMTs with Au-free Ti/Al/Ni/Ti ohmic contacts for Ka-band applications

Che Wei Hsu; Yueh Chin Lin; Shao Lun Lee; Kai Wen Chen; Ying Ciao Chen; Edward Yi Chang

doi:10.35848/1882-0786/ad5949

High linearity AlGaN/GaN HEMTs with Au-free Ti/Al/Ni/Ti ohmic contacts for Ka-band applications

Che Wei Hsu^*, Yueh Chin Lin, Shao Lun Lee, Kai Wen Chen, Ying Ciao Chen, Edward Yi Chang

^*此作品的通信作者

研究成果: Article › 同行評審

1 引文斯高帕斯（Scopus）

摘要

In this study, AlGaN/GaN HEMTs with Au-free Ti/Al/Ni/Ti ohmic contacts were fabricated. The device presents a contact resistance (R _c) of 0.64 Ω·mm and high linearity characteristics. The two-tone measurement at 28 GHz shows that the 2 × 50 μm device exhibits an excellent third-order intercept point (OIP3) value of 41.64 dBm at V _DS = 28 V, and an OIP3/P _DC of 24.2. An OIP3 of 46.59 dBm was achieved when the device’s gate width was increased to 8 × 50 μm at V _DS = 48 V. These results demonstrate that AlGaN/GaN HEMTs with Ti/Al/Ni/Ti ohmic contacts have potential for Ka-band applications.

原文	English
文章編號	071001
期刊	Applied Physics Express
卷	17
發行號	7
DOIs	https://doi.org/10.35848/1882-0786/ad5949
出版狀態	Published - 1 7月 2024

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10.35848/1882-0786/ad5949

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@article{cea3d03457f049258dc8c153d81b3800,

title = "High linearity AlGaN/GaN HEMTs with Au-free Ti/Al/Ni/Ti ohmic contacts for Ka-band applications",

abstract = "In this study, AlGaN/GaN HEMTs with Au-free Ti/Al/Ni/Ti ohmic contacts were fabricated. The device presents a contact resistance (R c) of 0.64 Ω·mm and high linearity characteristics. The two-tone measurement at 28 GHz shows that the 2 × 50 μm device exhibits an excellent third-order intercept point (OIP3) value of 41.64 dBm at V DS = 28 V, and an OIP3/P DC of 24.2. An OIP3 of 46.59 dBm was achieved when the device{\textquoteright}s gate width was increased to 8 × 50 μm at V DS = 48 V. These results demonstrate that AlGaN/GaN HEMTs with Ti/Al/Ni/Ti ohmic contacts have potential for Ka-band applications.",

keywords = "AlGaN/GaN HEMTs, Au-free, Ka-band, Ti/Al/Ni/Ti ohmic contacts, linearity",

author = "Hsu, {Che Wei} and Lin, {Yueh Chin} and Lee, {Shao Lun} and Chen, {Kai Wen} and Chen, {Ying Ciao} and Chang, {Edward Yi}",

note = "Publisher Copyright: {\textcopyright} 2024 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd.",

year = "2024",

month = jul,

day = "1",

doi = "10.35848/1882-0786/ad5949",

language = "English",

volume = "17",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "7",

}

TY - JOUR

T1 - High linearity AlGaN/GaN HEMTs with Au-free Ti/Al/Ni/Ti ohmic contacts for Ka-band applications

AU - Hsu, Che Wei

AU - Lin, Yueh Chin

AU - Lee, Shao Lun

AU - Chen, Kai Wen

AU - Chen, Ying Ciao

AU - Chang, Edward Yi

PY - 2024/7/1

Y1 - 2024/7/1

N2 - In this study, AlGaN/GaN HEMTs with Au-free Ti/Al/Ni/Ti ohmic contacts were fabricated. The device presents a contact resistance (R c) of 0.64 Ω·mm and high linearity characteristics. The two-tone measurement at 28 GHz shows that the 2 × 50 μm device exhibits an excellent third-order intercept point (OIP3) value of 41.64 dBm at V DS = 28 V, and an OIP3/P DC of 24.2. An OIP3 of 46.59 dBm was achieved when the device’s gate width was increased to 8 × 50 μm at V DS = 48 V. These results demonstrate that AlGaN/GaN HEMTs with Ti/Al/Ni/Ti ohmic contacts have potential for Ka-band applications.

AB - In this study, AlGaN/GaN HEMTs with Au-free Ti/Al/Ni/Ti ohmic contacts were fabricated. The device presents a contact resistance (R c) of 0.64 Ω·mm and high linearity characteristics. The two-tone measurement at 28 GHz shows that the 2 × 50 μm device exhibits an excellent third-order intercept point (OIP3) value of 41.64 dBm at V DS = 28 V, and an OIP3/P DC of 24.2. An OIP3 of 46.59 dBm was achieved when the device’s gate width was increased to 8 × 50 μm at V DS = 48 V. These results demonstrate that AlGaN/GaN HEMTs with Ti/Al/Ni/Ti ohmic contacts have potential for Ka-band applications.

KW - AlGaN/GaN HEMTs

KW - Au-free

KW - Ka-band

KW - Ti/Al/Ni/Ti ohmic contacts

KW - linearity

UR - http://www.scopus.com/inward/record.url?scp=85197726883&partnerID=8YFLogxK

U2 - 10.35848/1882-0786/ad5949

DO - 10.35848/1882-0786/ad5949

M3 - Article

AN - SCOPUS:85197726883

SN - 1882-0778

VL - 17

JO - Applied Physics Express

JF - Applied Physics Express

IS - 7

M1 - 071001

ER -

High linearity AlGaN/GaN HEMTs with Au-free Ti/Al/Ni/Ti ohmic contacts for Ka-band applications

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