High-k cobalt-titanium oxide dielectrics formed by oxidation of sputtered Co/Ti or Ti/Co films

Tung Ming Pan; Tan Fu Lei; Tien-Sheng Chao

doi:10.1063/1.1352044

High-k cobalt-titanium oxide dielectrics formed by oxidation of sputtered Co/Ti or Ti/Co films

Tung Ming Pan^*, Tan Fu Lei, Tien-Sheng Chao

^*此作品的通信作者

電子物理學系

研究成果: Article › 同行評審

17 引文斯高帕斯（Scopus）

摘要

High-k cobalt-titanium oxide (CoTiO₃) film was formed by directly oxidizing sputtered Co/Ti or Ti/Co films. Al/CoTiO₃/Si₃N₄/Si capacitor structures were fabricated and measured. Excellent electrical properties with an effective dielectric constant (i.e., k value) as high as 40 have been achieved for a CoTiO₃ gate dielectric with a buffer layer. The metal-oxide thus appears to be a very promising high-k gate dielectric for future ultralarge scale integrated devices.

原文	English
頁（從 - 到）	1439-1441
頁數	3
期刊	Applied Physics Letters
卷	78
發行號	10
DOIs	https://doi.org/10.1063/1.1352044
出版狀態	Published - 5 3月 2001

存取文件

10.1063/1.1352044

其它文件與鏈接

Link to publication in Scopus

引用此

@article{dbc0fd1fc8cd4a37beaa6b4b8793a4b8,

title = "High-k cobalt-titanium oxide dielectrics formed by oxidation of sputtered Co/Ti or Ti/Co films",

abstract = "High-k cobalt-titanium oxide (CoTiO3) film was formed by directly oxidizing sputtered Co/Ti or Ti/Co films. Al/CoTiO3/Si3N4/Si capacitor structures were fabricated and measured. Excellent electrical properties with an effective dielectric constant (i.e., k value) as high as 40 have been achieved for a CoTiO3 gate dielectric with a buffer layer. The metal-oxide thus appears to be a very promising high-k gate dielectric for future ultralarge scale integrated devices.",

author = "Pan, {Tung Ming} and Lei, {Tan Fu} and Tien-Sheng Chao",

year = "2001",

month = mar,

day = "5",

doi = "10.1063/1.1352044",

language = "English",

volume = "78",

pages = "1439--1441",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "10",

}

TY - JOUR

T1 - High-k cobalt-titanium oxide dielectrics formed by oxidation of sputtered Co/Ti or Ti/Co films

AU - Pan, Tung Ming

AU - Lei, Tan Fu

AU - Chao, Tien-Sheng

PY - 2001/3/5

Y1 - 2001/3/5

N2 - High-k cobalt-titanium oxide (CoTiO3) film was formed by directly oxidizing sputtered Co/Ti or Ti/Co films. Al/CoTiO3/Si3N4/Si capacitor structures were fabricated and measured. Excellent electrical properties with an effective dielectric constant (i.e., k value) as high as 40 have been achieved for a CoTiO3 gate dielectric with a buffer layer. The metal-oxide thus appears to be a very promising high-k gate dielectric for future ultralarge scale integrated devices.

AB - High-k cobalt-titanium oxide (CoTiO3) film was formed by directly oxidizing sputtered Co/Ti or Ti/Co films. Al/CoTiO3/Si3N4/Si capacitor structures were fabricated and measured. Excellent electrical properties with an effective dielectric constant (i.e., k value) as high as 40 have been achieved for a CoTiO3 gate dielectric with a buffer layer. The metal-oxide thus appears to be a very promising high-k gate dielectric for future ultralarge scale integrated devices.

UR - http://www.scopus.com/inward/record.url?scp=0039489965&partnerID=8YFLogxK

U2 - 10.1063/1.1352044

DO - 10.1063/1.1352044

M3 - Article

AN - SCOPUS:0039489965

SN - 0003-6951

VL - 78

SP - 1439

EP - 1441

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

High-k cobalt-titanium oxide dielectrics formed by oxidation of sputtered Co/Ti or Ti/Co films

摘要

存取文件

其它文件與鏈接

指紋

引用此