High hole concentration and diffusion suppression of heavily mg-doped p-gan for application in enhanced-mode gan hemt

Jin Ji Dai, Thi Thu Mai, Ssu Kuan Wu, Jing Rong Peng, Cheng Wei Liu, Hua Chiang Wen, Wu-Ching Chou*, Han Chieh Ho, Wei Fan Wang

*此作品的通信作者

研究成果: Article同行評審

7 引文 斯高帕斯(Scopus)

摘要

The effect of Mg doping on the electrical and optical properties of the p-GaN/AlGaN structures on a Si substrate grown by metal organic chemical vapor deposition was investigated. The Hall measurement showed that the activation efficiency of the sample with a 450 sccm Cp2Mg flow rate reached a maximum value of 2.22%. No reversion of the hole concentration was observed due to the existence of stress in the designed sample structures. This is attributed to the higher Mg-to-Ga incorporation rate resulting from the restriction of self-compensation under compressive strain. In addition, by using an AlN interlayer (IL) at the interface of p-GaN/AlGaN, the activation rate can be further improved after the doping concentration reaches saturation, and the diffusion of Mg atoms can also be effectively suppressed. A high hole concentration of about 1.3 × 1018 cm−3 can be achieved in the p-GaN/AlN-IL/AlGaN structure.

原文English
文章編號1766
頁(從 - 到)1-9
頁數9
期刊Nanomaterials
11
發行號7
DOIs
出版狀態Published - 7月 2021

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