@article{63cf96c532414411a5352d16ac9ba441,
title = "High-Frequency Performance of Movpe Npn AlGaAs/GaAs Heterojunction Bipolar Transistors",
abstract = "Base doping densities near 1020cm-3 and emitter doping densities near 7 × 1017cm-3 have been achieved in MOVPE HBT structures and combined with self-aligned processing resulting in fmax = 94 GHz and ft = 45 GHz. To our knowledge, these are the first MOVPE HBTs demonstrated to operate at millimetre-wave frequencies.",
keywords = "Bipolar devices, Epitaxy, Semiconductor devices and materials, Transistors",
author = "Enquist, {P. M.} and Hutchby, {J. A.} and Mau-Chung Chang and Asbeck, {P. M.} and Sheng, {N. H.} and Higgins, {J. A.}",
year = "1989",
month = aug,
day = "3",
doi = "10.1049/el:19890755",
language = "English",
volume = "25",
pages = "1124--1125",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology",
number = "17",
}