High-Frequency Performance of Movpe Npn AlGaAs/GaAs Heterojunction Bipolar Transistors

P. M. Enquist, J. A. Hutchby, Mau-Chung Chang, P. M. Asbeck, N. H. Sheng, J. A. Higgins

    研究成果: Article同行評審

    12 引文 斯高帕斯(Scopus)

    摘要

    Base doping densities near 1020cm-3 and emitter doping densities near 7 × 1017cm-3 have been achieved in MOVPE HBT structures and combined with self-aligned processing resulting in fmax = 94 GHz and ft = 45 GHz. To our knowledge, these are the first MOVPE HBTs demonstrated to operate at millimetre-wave frequencies.

    原文English
    頁(從 - 到)1124-1125
    頁數2
    期刊Electronics Letters
    25
    發行號17
    DOIs
    出版狀態Published - 3 8月 1989

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