High frequency characteristics of nanoscale silicon nanowire FET

Yi-Ming Li*, Chih Hong Hwang

*此作品的通信作者

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

Nanoscale multigate field effect transistors (FETs) are potentially next-generation device candidates for achieving high performance targets of the ITRS due to their superior reduction of the short channel effects and excellent compatibility with planar CMOS fabrication process [1,2]. In this work, we for the first time numerically explore the high frequency characteristics of the sub-45nm silicon nanowire FET. Three-dimensional (3D) density-gradient-based device transport equations directly coupling with circuit equations are simultaneously performed for calculating the property of frequency response. Our result shows that the cut-off frequency of a well-designed sub-45nm nanowire FET with 100% surrounding gate is approach to 10 THz, which substantially benefits from the nature of infinite gate in the nanowire FET. Silicon-based nanowire FET devices as active components in microwave circuits draw people's attention for their extremely rich high frequency property [3, 4]. The extensive results and analyses are presented on the promising devices for high frequency analog applications.

原文English
主出版物標題2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings
章節2
頁面193-196
頁數4
出版狀態Published - 20 5月 2007
事件2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007 - Santa Clara, CA, United States
持續時間: 20 5月 200724 5月 2007

出版系列

名字2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings
1

Conference

Conference2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007
國家/地區United States
城市Santa Clara, CA
期間20/05/0724/05/07

指紋

深入研究「High frequency characteristics of nanoscale silicon nanowire FET」主題。共同形成了獨特的指紋。

引用此