TY - JOUR

T1 - High-frequency characteristic fluctuations of nano-MOSFET circuit induced by random dopants

AU - Li, Yi-Ming

AU - Hwang, Chih Hong

PY - 2008/12

Y1 - 2008/12

N2 - As the dimension of semiconductor device shrunk into nanometer scale (nanoscale), characteristic fluctuation is more pronounced, and become crucial for circuit design. In this paper, discrete-dopant-induced characteristic fluctuation of 16-nm-gate metaloxidesemiconductor field effect transistors (MOSFET) circuit under high-frequency regime is quantitatively studied. The circuit gain, the 3 dB bandwidth and the unity-gain bandwidth of the tested nanoscale transistor circuit are calculated concurrently capturing the discrete-dopant-number- and discrete- dopant-position-induced fluctuations in the large-scale statistically sound atomistic device/circuit coupled simulation. For the 16-nm-gate MOSFET circuit, the number of discrete dopants, varying from zero to 14, may result in 5.7% variation of the circuit gain, 14.1% variation of the 3 dB bandwidth, and 10.4% variation of the unity-gain bandwidth. To suppress the high-frequency characteristic fluctuations, an improved doping distribution along the longitudinal diffusion direction from the MOSFET's surface to substrate is further performed to examine the associated fluctuation. The improved vertical doping profile with less dopants locating near surface of channel effectively reduces the fluctuations of the circuit gain, the 3 dB bandwidth and the unity-gain bandwidth dramatically. Compared with the original doping profile, the reduction is 32.3%, 19.4% and 51.8%, respectively. This study provides an insight into random-dopant-induced intrinsic high-frequency characteristic fluctuations and verifies the potential fluctuation suppression technique on high-frequency characteristic fluctuations of nanoscale transistor circuit.

AB - As the dimension of semiconductor device shrunk into nanometer scale (nanoscale), characteristic fluctuation is more pronounced, and become crucial for circuit design. In this paper, discrete-dopant-induced characteristic fluctuation of 16-nm-gate metaloxidesemiconductor field effect transistors (MOSFET) circuit under high-frequency regime is quantitatively studied. The circuit gain, the 3 dB bandwidth and the unity-gain bandwidth of the tested nanoscale transistor circuit are calculated concurrently capturing the discrete-dopant-number- and discrete- dopant-position-induced fluctuations in the large-scale statistically sound atomistic device/circuit coupled simulation. For the 16-nm-gate MOSFET circuit, the number of discrete dopants, varying from zero to 14, may result in 5.7% variation of the circuit gain, 14.1% variation of the 3 dB bandwidth, and 10.4% variation of the unity-gain bandwidth. To suppress the high-frequency characteristic fluctuations, an improved doping distribution along the longitudinal diffusion direction from the MOSFET's surface to substrate is further performed to examine the associated fluctuation. The improved vertical doping profile with less dopants locating near surface of channel effectively reduces the fluctuations of the circuit gain, the 3 dB bandwidth and the unity-gain bandwidth dramatically. Compared with the original doping profile, the reduction is 32.3%, 19.4% and 51.8%, respectively. This study provides an insight into random-dopant-induced intrinsic high-frequency characteristic fluctuations and verifies the potential fluctuation suppression technique on high-frequency characteristic fluctuations of nanoscale transistor circuit.

KW - Characteristic fluctuation

KW - Fluctuation suppression technique

KW - High frequency

KW - Modeling and simulation

KW - Nanometer scale metal-oxide-semiconductor field effect transistors (MOSFET) device and circuit

KW - Random dopant effect

UR - http://www.scopus.com/inward/record.url?scp=57849152941&partnerID=8YFLogxK

U2 - 10.1109/TMTT.2008.2007077

DO - 10.1109/TMTT.2008.2007077

M3 - Article

AN - SCOPUS:57849152941

SN - 0018-9480

VL - 56

SP - 2726

EP - 2733

JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

IS - 12

M1 - 4682602

ER -