High field hole velocity and velocity overshoot in silicon inversion layers

Dennis Sinitsky*, Fariborz Assaderaghi, Chen-Ming Hu, Jeffrey Bokor

*此作品的通信作者

研究成果: Article同行評審

17 引文 斯高帕斯(Scopus)

摘要

We report measurements of the drift velocity of holes in silicon inversion layers. The saturation velocity of holes at 300 K is found to be strongly dependent on the effective vertical field. No hole velocity overshoot was observed down to 0.16-μm channel length at room temperature. At 77 K, hole velocity saturation is much less pronounced, and a 10% higher average velocity is observed for 0.16- μm channel length as compared to 0.36-μm channel length.

原文English
頁(從 - 到)54-56
頁數3
期刊IEEE Electron Device Letters
18
發行號2
DOIs
出版狀態Published - 1 二月 1997

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