High field-effect performance and intrinsic scattering in the two-dimensional MoS2 semiconductors

Hao Wei Tu, Che Chi Shih, Chin Lung Lin, Meng Zhe Yu, Jian Jhong Lai, Ji Chang Luo, Geng Li Lin, Wen-Bin Jian*, Kenji Watanabe, Takashi Taniguchi, Chenming Hu

*此作品的通信作者

研究成果: Article同行評審

8 引文 斯高帕斯(Scopus)

摘要

The mobility of MoS2 nanosheets plays an important role in the application of nanoelectronics. The two-dimensional (2D) MoS2 semiconductors have been investigated while the reported mobility varies enormously. We adopt a standard four-terminal electrical measurement and eliminate any contact contributions. We fabricated several tens of field-effect transistors (FETs) with MoS2 nanosheets exfoliated from the same MoS2 bulk. The MoS2 FETs can be grouped into either high- or low-mobility devices according to their temperature behaviors of mobilities. With an RT mobility higher than ~ 25 or ~ 30 cm2V-1s−1, the MoS2 FETs exhibit an increasing mobility with decreasing temperature, implying phonon scattering in these high-mobility (HM) devices. The HM devices are accompanied with metallic states and their conductivities close to ~ 1 e2/h. A low specific contact resistivity of ~ 450 Ω·μm is observed in these HM devices. In contrast, the MoS2 FETs with an RT mobility lower than ~ 30 or ~ 35 cm2V-1s−1, categorized as low-mobility (LM) devices, reveal a decreasing mobility with decreasing temperature. These LM devices show an insulating state, carriers suffering from impurity scattering, and a high contact resistance. Their temperature dependent resistances are highly concordant with the 2D Mott's variable range hopping. These observations corroborate a large variation of intrinsic disorders in MoS2 nanosheets.

原文English
文章編號150422
頁(從 - 到)1-8
頁數8
期刊Applied Surface Science
564
DOIs
出版狀態Published - 30 10月 2021

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