High endurance and multilevel operation in oxide semiconductor-based resistive RAM using thin-film transistor as a selector

Yang Shun Fan; Po-Tsun Liu; Chun Ching Chen; Che Chia Chang

doi:10.1149/2.0061508ssl

High endurance and multilevel operation in oxide semiconductor-based resistive RAM using thin-film transistor as a selector

Yang Shun Fan, Po-Tsun Liu, Chun Ching Chen, Che Chia Chang

光電工程學系

研究成果: Article › 同行評審

13 引文斯高帕斯（Scopus）

摘要

Resistive random access memory (RRAM) composed of Ti/AlZnSnO (AZTO)/HfO₂/Pt structure associated with one thin film transistor (TFT) architecture are investigated. The proposed 1T1R devices show superior performance via an excellent current limiter, namely, an oxide semiconductor-based TFT. Multilevel storage characteristics are demonstrated by modulating the amplitude of the TFT gate voltage. The four resistance levels are clearly obtained with stable retention ability at a least 10⁴ s at 85°C. Electric-pulse-induced resistance switching test up to 10⁸ switching cycles are conducted. Experimental results show the 1T1R AZTO-based RRAM with reliable endurance and multilevel operation has great potential for system-on-panel (SoP) applications.

原文	English
頁（從 - 到）	Q41-Q43
期刊	ECS Solid State Letters
卷	4
發行號	9
DOIs	https://doi.org/10.1149/2.0061508ssl
出版狀態	Published - 1月 2015

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@article{b304c6ef11a948d7a7263fb24512d317,

title = "High endurance and multilevel operation in oxide semiconductor-based resistive RAM using thin-film transistor as a selector",

abstract = "Resistive random access memory (RRAM) composed of Ti/AlZnSnO (AZTO)/HfO2/Pt structure associated with one thin film transistor (TFT) architecture are investigated. The proposed 1T1R devices show superior performance via an excellent current limiter, namely, an oxide semiconductor-based TFT. Multilevel storage characteristics are demonstrated by modulating the amplitude of the TFT gate voltage. The four resistance levels are clearly obtained with stable retention ability at a least 104 s at 85°C. Electric-pulse-induced resistance switching test up to 108 switching cycles are conducted. Experimental results show the 1T1R AZTO-based RRAM with reliable endurance and multilevel operation has great potential for system-on-panel (SoP) applications.",

author = "Fan, {Yang Shun} and Po-Tsun Liu and Chen, {Chun Ching} and Chang, {Che Chia}",

year = "2015",

month = jan,

doi = "10.1149/2.0061508ssl",

language = "English",

volume = "4",

pages = "Q41--Q43",

journal = "ECS Solid State Letters",

issn = "2162-8742",

publisher = "The Electrochemical Society",

number = "9",

}

TY - JOUR

T1 - High endurance and multilevel operation in oxide semiconductor-based resistive RAM using thin-film transistor as a selector

AU - Fan, Yang Shun

AU - Liu, Po-Tsun

AU - Chen, Chun Ching

AU - Chang, Che Chia

PY - 2015/1

Y1 - 2015/1

N2 - Resistive random access memory (RRAM) composed of Ti/AlZnSnO (AZTO)/HfO2/Pt structure associated with one thin film transistor (TFT) architecture are investigated. The proposed 1T1R devices show superior performance via an excellent current limiter, namely, an oxide semiconductor-based TFT. Multilevel storage characteristics are demonstrated by modulating the amplitude of the TFT gate voltage. The four resistance levels are clearly obtained with stable retention ability at a least 104 s at 85°C. Electric-pulse-induced resistance switching test up to 108 switching cycles are conducted. Experimental results show the 1T1R AZTO-based RRAM with reliable endurance and multilevel operation has great potential for system-on-panel (SoP) applications.

AB - Resistive random access memory (RRAM) composed of Ti/AlZnSnO (AZTO)/HfO2/Pt structure associated with one thin film transistor (TFT) architecture are investigated. The proposed 1T1R devices show superior performance via an excellent current limiter, namely, an oxide semiconductor-based TFT. Multilevel storage characteristics are demonstrated by modulating the amplitude of the TFT gate voltage. The four resistance levels are clearly obtained with stable retention ability at a least 104 s at 85°C. Electric-pulse-induced resistance switching test up to 108 switching cycles are conducted. Experimental results show the 1T1R AZTO-based RRAM with reliable endurance and multilevel operation has great potential for system-on-panel (SoP) applications.

UR - http://www.scopus.com/inward/record.url?scp=84937553238&partnerID=8YFLogxK

U2 - 10.1149/2.0061508ssl

DO - 10.1149/2.0061508ssl

M3 - Article

AN - SCOPUS:84937553238

SN - 2162-8742

VL - 4

SP - Q41-Q43

JO - ECS Solid State Letters

JF - ECS Solid State Letters

IS - 9

ER -

High endurance and multilevel operation in oxide semiconductor-based resistive RAM using thin-film transistor as a selector

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