High Endurance and Low Fatigue Effect of Bilayer Stacked Antiferroelectric/Ferroelectric Hf<italic>x</italic>Zr1-<italic>x</italic>O2

Chieh Lo; Chung Kuang Chen; Chen Fen Chang; Feng Shuo Zhang; Zong Han Lu; Tien Sheng Chao

doi:10.1109/LED.2021.3134178

High Endurance and Low Fatigue Effect of Bilayer Stacked Antiferroelectric/Ferroelectric Hf_{<italic>x</italic>}Zr_{1-<italic>x</italic>}O₂

Chieh Lo, Chung Kuang Chen, Chen Fen Chang, Feng Shuo Zhang, Zong Han Lu, Tien Sheng Chao^*

^*此作品的通信作者

電子物理學系

研究成果: Article › 同行評審

5 引文斯高帕斯（Scopus）

摘要

We fabricated ultrathin metal–insulator–metal capacitors and compared the performance of bilayer HZO consisting of 5-nm-thick antiferroelectric HZO (Zr = 75%) and 5-nm-thick ferroelectric HZO (Zr = 40%) with that of ferroelectric HZO (10-nm-thick) and antiferroelectric HZO (10-nm-thick). The bilayer HZO exhibited advantages of both antiferroelectricity and ferroelectricity, including a high dielectric constant (58), high remnant polarization (approximately <inline-formula> <tex-math notation="LaTeX">15~mu text{C} </tex-math></inline-formula>/cm²), a low coercive field, and excellent endurance (>10¹⁰ cycles). These results suggest that bilayer HZO is a promising candidate for use in nonvolatile memory devices.

原文	English
頁（從 - 到）	224-227
頁數	4
期刊	Ieee Electron Device Letters
卷	43
發行號	2
DOIs	https://doi.org/10.1109/LED.2021.3134178
出版狀態	Published - 1 2月 2022

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10.1109/LED.2021.3134178

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title = "High Endurance and Low Fatigue Effect of Bilayer Stacked Antiferroelectric/Ferroelectric HfxZr1-xO2",

abstract = "We fabricated ultrathin metal–insulator–metal capacitors and compared the performance of bilayer HZO consisting of 5-nm-thick antiferroelectric HZO (Zr = 75%) and 5-nm-thick ferroelectric HZO (Zr = 40%) with that of ferroelectric HZO (10-nm-thick) and antiferroelectric HZO (10-nm-thick). The bilayer HZO exhibited advantages of both antiferroelectricity and ferroelectricity, including a high dielectric constant (58), high remnant polarization (approximately 15~mu text{C} /cm2), a low coercive field, and excellent endurance (>1010 cycles). These results suggest that bilayer HZO is a promising candidate for use in nonvolatile memory devices.",

keywords = "Capacitors, Fatigue, Grain size, Hafnium oxide, Iron, Nonvolatile memory, Zirconium",

author = "Chieh Lo and Chen, {Chung Kuang} and Chang, {Chen Fen} and Zhang, {Feng Shuo} and Lu, {Zong Han} and Chao, {Tien Sheng}",

note = "Publisher Copyright: 0741-3106 {\textcopyright} 2021 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission. See https://www.ieee.org/publications/rights/index.html for more information.",

year = "2022",

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doi = "10.1109/LED.2021.3134178",

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T1 - High Endurance and Low Fatigue Effect of Bilayer Stacked Antiferroelectric/Ferroelectric HfxZr1-xO2

AU - Lo, Chieh

AU - Chen, Chung Kuang

AU - Chang, Chen Fen

AU - Zhang, Feng Shuo

AU - Lu, Zong Han

AU - Chao, Tien Sheng

N1 - Publisher Copyright: 0741-3106 © 2021 IEEE. Personal use is permitted, but republication/redistribution requires IEEE permission. See https://www.ieee.org/publications/rights/index.html for more information.

PY - 2022/2/1

Y1 - 2022/2/1

N2 - We fabricated ultrathin metal–insulator–metal capacitors and compared the performance of bilayer HZO consisting of 5-nm-thick antiferroelectric HZO (Zr = 75%) and 5-nm-thick ferroelectric HZO (Zr = 40%) with that of ferroelectric HZO (10-nm-thick) and antiferroelectric HZO (10-nm-thick). The bilayer HZO exhibited advantages of both antiferroelectricity and ferroelectricity, including a high dielectric constant (58), high remnant polarization (approximately 15~mu text{C} /cm2), a low coercive field, and excellent endurance (>1010 cycles). These results suggest that bilayer HZO is a promising candidate for use in nonvolatile memory devices.

AB - We fabricated ultrathin metal–insulator–metal capacitors and compared the performance of bilayer HZO consisting of 5-nm-thick antiferroelectric HZO (Zr = 75%) and 5-nm-thick ferroelectric HZO (Zr = 40%) with that of ferroelectric HZO (10-nm-thick) and antiferroelectric HZO (10-nm-thick). The bilayer HZO exhibited advantages of both antiferroelectricity and ferroelectricity, including a high dielectric constant (58), high remnant polarization (approximately 15~mu text{C} /cm2), a low coercive field, and excellent endurance (>1010 cycles). These results suggest that bilayer HZO is a promising candidate for use in nonvolatile memory devices.

KW - Capacitors

KW - Fatigue

KW - Grain size

KW - Hafnium oxide

KW - Iron

KW - Nonvolatile memory

KW - Zirconium

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DO - 10.1109/LED.2021.3134178

M3 - Article

AN - SCOPUS:85121375048

SN - 0741-3106

VL - 43

SP - 224

EP - 227

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 2

ER -

High Endurance and Low Fatigue Effect of Bilayer Stacked Antiferroelectric/Ferroelectric Hf<italic>x</italic>Zr1-<italic>x</italic>O2

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High Endurance and Low Fatigue Effect of Bilayer Stacked Antiferroelectric/Ferroelectric Hf_{<italic>x</italic>}Zr_{1-<italic>x</italic>}O₂