High Endurance and Low Fatigue Effect of Bilayer Stacked Antiferroelectric/Ferroelectric Hf<italic>x</italic>Zr1-<italic>x</italic>O2

Chieh Lo, Chung Kuang Chen, Chen Fen Chang, Feng Shuo Zhang, Zong Han Lu, Tien Sheng Chao*

*此作品的通信作者

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

We fabricated ultrathin metal–insulator–metal capacitors and compared the performance of bilayer HZO consisting of 5-nm-thick antiferroelectric HZO (Zr = 75%) and 5-nm-thick ferroelectric HZO (Zr = 40%) with that of ferroelectric HZO (10-nm-thick) and antiferroelectric HZO (10-nm-thick). The bilayer HZO exhibited advantages of both antiferroelectricity and ferroelectricity, including a high dielectric constant (58), high remnant polarization (approximately <inline-formula> <tex-math notation="LaTeX">15~mu text{C} </tex-math></inline-formula>/cm2), a low coercive field, and excellent endurance (>1010 cycles). These results suggest that bilayer HZO is a promising candidate for use in nonvolatile memory devices.

原文English
頁(從 - 到)224-227
頁數4
期刊Ieee Electron Device Letters
43
發行號2
DOIs
出版狀態Published - 1 2月 2022

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