研究成果: Patent
}
TY - PAT
T1 - HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME
AU - Hsu, Heng-Tung
AU - Chang, Edward Yi
PY - 2012/5/1
Y1 - 2012/5/1
M3 - Patent
M1 - US 8,169,002 B2
ER -