High electron mobility germanium FinFET fabricated by atomic layer defect-free and roughness-free etching

Daisuke Ohori, Takuya Fujii, Shuichi Noda, Wataru Mizubayashi, Kazuhiko Endo, Yao Jen Lee, Jenn-Hwan Tarng, Yi-Ming Li, Seiji Samukawa*

*此作品的通信作者

研究成果: Article同行評審

2 引文 斯高帕斯(Scopus)

摘要

We investigated a high electron mobility Ge FinFET fabricated by defect-free and roughness-free atomic layer neutral beam etching (NBE) compared with one fabricated by conventional plasma etching (PE). The etching interface roughness and defect were estimated by high-resolution transmission electron microscopy (TEM). In the case of using atomic layer defect-free NBE, the root-mean-square roughness of the Ge Fin sidewall surface is 1/3 times smaller than that using PE. Then, the electron mobility of Ge FinFET was improved by 1.65 times compared with that of a PE etched FinFET sample. For the subthreshold swing, the defect density of the interface between the Ge and gate dielectric film was improved by NBE. Ioff average currents of NBE and PE were around 18.1 and 57.6 nA/μm, respectively. As a result, NBE reduces the off-leakage current to 1/3 times less than PE. This corresponded to the differences in surface roughness and defect generation between NBE and PE. Therefore, we found that NBE could achieve a good performance by defect-free and atomically-flat etching the surface.

原文English
文章編號9340551
頁(從 - 到)26-30
頁數5
期刊IEEE Open Journal of Nanotechnology
2
DOIs
出版狀態Published - 1月 2021

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