High-efficiency InGaN red micro-LEDs for visible light communication

Yu Ming Huang; Chun Yen Peng; Wen Chien Miao; Hsin Chiang; Tzu Yi Lee; Yun Han Chang; Konthoujam James Singh; Z. Daisuke Iida; Ray Hua Horng; Chi Wai Chow; Chien Chung Lin; Kazuhiro Ohkawa; Shih Chen Chen; Hao Chung Kuo

doi:10.1364/PRJ.462050

High-efficiency InGaN red micro-LEDs for visible light communication

Yu Ming Huang, Chun Yen Peng, Wen Chien Miao, Hsin Chiang, Tzu Yi Lee, Yun Han Chang, Konthoujam James Singh, Z. Daisuke Iida, Ray Hua Horng, Chi Wai Chow, Chien Chung Lin, Kazuhiro Ohkawa, Shih Chen Chen, Hao Chung Kuo

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54 引文斯高帕斯（Scopus）

摘要

In this study, we present a high-efficiency InGaN red micro-LED fabricated by the incorporation of superlattice structure, atomic layer deposition passivation, and a distributed Bragg reflector, exhibiting maximum external quantum efficiency of 5.02% with a low efficiency droop corresponding to an injection current density of 112 A∕cm². The fast carrier dynamics in the InGaN is characterized by using time-resolved photoluminescence, which is correlated to a high modulation bandwidth of 271 MHz achieved by a 6× 25-μm-sized micro-LED array with a data transmission rate of 350 Mbit/s at a high injection current density of 2000 A∕cm². It holds great promise for full-color micro-displays as well as high-speed visible light communication applications based on monolithic InGaN micro-LED technologies.

原文	English
頁（從 - 到）	1978-1986
頁數	9
期刊	Photonics Research
卷	10
發行號	9
DOIs	https://doi.org/10.1364/PRJ.462050
出版狀態	Published - 1 8月 2022

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title = "High-efficiency InGaN red micro-LEDs for visible light communication",

abstract = "In this study, we present a high-efficiency InGaN red micro-LED fabricated by the incorporation of superlattice structure, atomic layer deposition passivation, and a distributed Bragg reflector, exhibiting maximum external quantum efficiency of 5.02% with a low efficiency droop corresponding to an injection current density of 112 A∕cm2. The fast carrier dynamics in the InGaN is characterized by using time-resolved photoluminescence, which is correlated to a high modulation bandwidth of 271 MHz achieved by a 6× 25-μm-sized micro-LED array with a data transmission rate of 350 Mbit/s at a high injection current density of 2000 A∕cm2. It holds great promise for full-color micro-displays as well as high-speed visible light communication applications based on monolithic InGaN micro-LED technologies.",

author = "Huang, {Yu Ming} and Peng, {Chun Yen} and Miao, {Wen Chien} and Hsin Chiang and Lee, {Tzu Yi} and Chang, {Yun Han} and Singh, {Konthoujam James} and {Daisuke Iida}, Z. and Horng, {Ray Hua} and Chow, {Chi Wai} and Lin, {Chien Chung} and Kazuhiro Ohkawa and Chen, {Shih Chen} and Kuo, {Hao Chung}",

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AU - Huang, Yu Ming

AU - Peng, Chun Yen

AU - Miao, Wen Chien

AU - Chiang, Hsin

AU - Lee, Tzu Yi

AU - Chang, Yun Han

AU - Singh, Konthoujam James

AU - Daisuke Iida, Z.

AU - Horng, Ray Hua

AU - Chow, Chi Wai

AU - Lin, Chien Chung

AU - Ohkawa, Kazuhiro

AU - Chen, Shih Chen

AU - Kuo, Hao Chung

PY - 2022/8/1

Y1 - 2022/8/1

N2 - In this study, we present a high-efficiency InGaN red micro-LED fabricated by the incorporation of superlattice structure, atomic layer deposition passivation, and a distributed Bragg reflector, exhibiting maximum external quantum efficiency of 5.02% with a low efficiency droop corresponding to an injection current density of 112 A∕cm2. The fast carrier dynamics in the InGaN is characterized by using time-resolved photoluminescence, which is correlated to a high modulation bandwidth of 271 MHz achieved by a 6× 25-μm-sized micro-LED array with a data transmission rate of 350 Mbit/s at a high injection current density of 2000 A∕cm2. It holds great promise for full-color micro-displays as well as high-speed visible light communication applications based on monolithic InGaN micro-LED technologies.

AB - In this study, we present a high-efficiency InGaN red micro-LED fabricated by the incorporation of superlattice structure, atomic layer deposition passivation, and a distributed Bragg reflector, exhibiting maximum external quantum efficiency of 5.02% with a low efficiency droop corresponding to an injection current density of 112 A∕cm2. The fast carrier dynamics in the InGaN is characterized by using time-resolved photoluminescence, which is correlated to a high modulation bandwidth of 271 MHz achieved by a 6× 25-μm-sized micro-LED array with a data transmission rate of 350 Mbit/s at a high injection current density of 2000 A∕cm2. It holds great promise for full-color micro-displays as well as high-speed visible light communication applications based on monolithic InGaN micro-LED technologies.

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VL - 10

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EP - 1986

JO - Photonics Research

JF - Photonics Research

IS - 9

ER -

High-efficiency InGaN red micro-LEDs for visible light communication

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