High efficiency GaN-based near UV light emitting diodes with asymmetric triangular multiple quantum wells

Heng Li, Chia Jui Chang, Shiou Yi Kuo, Jun Rong Chen, Tien-chang Lu

研究成果: Conference contribution同行評審

1 引文 斯高帕斯(Scopus)

摘要

Near-ultraviolet (NUV) light-emitting diodes (LEDs) have found many applications in the areas such as UV curing, bio-chemical sensors etc. However, the internal quantum efficiency (IQE) of NUV-LEDs show relatively lower value than blue LEDs. In previous research, asymmetric triangular MQWs with gallium face-oriented inclination in the blue wavelength band are demonstrated to have higher emission efficiency and lower efficiency droop. In this study, we surprisingly found different trend in NUV-LEDs. Compared to blue LEDs, NUV-LEDs tend to have shallower quantum wells and less ability to localize holes. In the simulation results, holes are more confined within nitrogen face-oriented inclination than that in MQWs with gallium face-oriented inclination and the IQE are improved about 10%.

原文English
主出版物標題Light-Emitting Diodes
主出版物子標題Materials, Devices, and Applications for Solid State Lighting XXII
編輯Michael R. Krames, Martin Strassburg, Li-Wei Tu, Jong Kyu Kim
發行者SPIE
ISBN(電子)9781510615939
DOIs
出版狀態Published - 2018
事件Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII 2018 - San Francisco, United States
持續時間: 29 1月 201831 1月 2018

出版系列

名字Proceedings of SPIE - The International Society for Optical Engineering
10554
ISSN(列印)0277-786X
ISSN(電子)1996-756X

Conference

ConferenceLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII 2018
國家/地區United States
城市San Francisco
期間29/01/1831/01/18

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