@inproceedings{74d264bd009d4ce19eb67c1d24bb3500,
title = "High efficiency GaN-based near UV light emitting diodes with asymmetric triangular multiple quantum wells",
abstract = "Near-ultraviolet (NUV) light-emitting diodes (LEDs) have found many applications in the areas such as UV curing, bio-chemical sensors etc. However, the internal quantum efficiency (IQE) of NUV-LEDs show relatively lower value than blue LEDs. In previous research, asymmetric triangular MQWs with gallium face-oriented inclination in the blue wavelength band are demonstrated to have higher emission efficiency and lower efficiency droop. In this study, we surprisingly found different trend in NUV-LEDs. Compared to blue LEDs, NUV-LEDs tend to have shallower quantum wells and less ability to localize holes. In the simulation results, holes are more confined within nitrogen face-oriented inclination than that in MQWs with gallium face-oriented inclination and the IQE are improved about 10%.",
author = "Heng Li and Chang, {Chia Jui} and Kuo, {Shiou Yi} and Chen, {Jun Rong} and Tien-chang Lu",
note = "Publisher Copyright: {\textcopyright} 2018 SPIE.; Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII 2018 ; Conference date: 29-01-2018 Through 31-01-2018",
year = "2018",
doi = "10.1117/12.2289389",
language = "English",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Krames, {Michael R.} and Martin Strassburg and Li-Wei Tu and Kim, {Jong Kyu}",
booktitle = "Light-Emitting Diodes",
address = "美國",
}