High efficiency GaN-based light-emitting diodes with embedded air voids/SiO2 nanomasks

Ching Hsueh Chiu*, Chien-Chung Lin, Hau Vei Han, Che Yu Liu, Yan Hao Chen, Yu-Pin Lan, Pei-Chen Yu, Hao-Chung Kuo, Tien-Chang Lu, Shing Chung Wang, Chun Yen Chang

*此作品的通信作者

研究成果: Article同行評審

40 引文 斯高帕斯(Scopus)

摘要

In this paper, the high performance GaN-based light-emitting diodes (LEDs) with embedded microscale air voids and an SiO 2 nanomask by metalorganic chemical vapor deposition (MOCVD) were demonstrated. Microscale air voids and an SiO 2 nanomask were clearly observed at the interface between GaN nanorods (NRs) and the overgrown GaN layer by scanning electron microscopy (SEM). From the reflectance spectra we show strong reflectance differences due to the different refractive index gradient between the GaN grown on the nanotemplate and sapphire. It can increase the light extraction efficiency due to additional light scattering. The transmission electron microscopy (TEM) images show the threading dislocations were suppressed by nanoscale epitaxial lateral overgrowth (NELOG). The LEDs with embedded microscale air voids and an SiO 2 nanomask exhibit smaller reverse-bias current and large enhancement of the light output (65% at 20mA) compared with conventional LEDs.

原文English
文章編號045303
頁數7
期刊Nanotechnology
23
發行號4
DOIs
出版狀態Published - 3 2月 2012

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