High density and low leakage current in TiO 2 MIM capacitors processed at 300°C

C. H. Cheng*, S. H. Lin, K. Y. Jhou, W. J. Chen, C. P. Chou, F. S. Yeh, Jim Hu, M. Hwang, T. Arikado, Sean P. McAlister, Albert Chin

*此作品的通信作者

研究成果: Article同行評審

60 引文 斯高帕斯(Scopus)

摘要

We report Ir/TiO 2 /TaN metal-insulator-metal capacitors processed at only 300°C, which show a capacitance density of 28 fF/ μm 2 and a leakage current of 3 × 10 -8 (25 °C) or 6 × 10-7 (125 °C) A/cm 2 at -1 V. This performance is due to the combined effects of 300 °C nanocrystallized high-κ TiO 2 , a high conduction band offset, and high work-function upper electrode. These devices show potential for integration in future very-large-scale-integration technologies.

原文English
頁(從 - 到)845-847
頁數3
期刊IEEE Electron Device Letters
29
發行號8
DOIs
出版狀態Published - 1 八月 2008

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