High Current Density and Low Ron Quaternary InAlGaN MIS-HEMT on Si for Power Applications

Keyphrases

• Aluminum Gallium Nitride (AlGaN) 66%
• Back-barrier Layer 33%
• Barrier Layer 33%
• Buffer Layer 33%
• Carrier Density 33%
• Current Density 66%
• Dynamic RON 33%
• High Breakdown Voltage 33%
• High Current Density 100%
• High Electron Mobility Transistor 100%
• High Output Current 66%
• High Power Switching 33%
• Improved Dynamics 33%
• InAlGaN 33%
• Metal-insulator-semiconductor 100%
• Off-state Breakdown Voltage 33%
• On-resistance 33%
• Performance Dynamics 33%
• Power Applications 100%
• Power Switching Applications 33%
• Quaternary AlInGaN 100%
• Si Substrate 33%
• Stress Voltage 33%
• Superlattice Buffer 33%

Engineering

• Barrier Layer 100%
• Breakdown Voltage 100%
• Buffer Layer 50%
• Carrier Concentration 50%
• Current Output 100%
• Dynamic Performance 50%
• High Current Density 100%
• Si Substrate 50%
• Superlattice 50%

Material Science

• Aluminum Nitride 33%
• Buffer Layer 33%
• Carrier Concentration 33%
• Density 100%
• Electron Mobility 100%
• Superlattice 33%
• Transistor 100%