High-conductance two-dimensional 1T'-MoTe 2 synthesized by sputtering

Jyun Hong Huang, Hao Hua Hsu, Yao Jen Lee*, Tuo-Hung Hou

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

Among extensively researched 2D-TMDs, MoTe 2 is an emerging but understudied material because of the lack of reliable and reproducible synthesis methods. The difficulties of its synthesis originate from the weak Mo-Te bonding energy, which results in the low chemical reactivity of MoTe 2 . Additionally, compared with other TMDs, MoTe 2 is relatively unstable. It easily oxidizes and decomposes at high temperatures, which complicate the synthesis using conventional CVD. We have previously developed a PVD method capable of depositing large-area, high-crystallinity, few-layer 2D MoTe 2 without complex designs of gas-phase transport or Mo-Te chemical reaction. MoTe 2 is directly sputtered and post-annealed in a 2D encapsulation structure to improve its crystallinity. MoTe 2 can be synthesized in either homogeneous semiconducting 2H or metallic 1T' phase by controlling the adequate thermal budget during annealing. This talk will mainly discuss the process optimization and electrical properties of 1T'-MoTe 2 , which is potentially important in several emerging research fields, including 2D interconnect, topological superconductor, and 2H-lT' in-plane homojunction transistor.

原文English
主出版物標題2018 IEEE 13th Nanotechnology Materials and Devices Conference, NMDC 2018
發行者Institute of Electrical and Electronics Engineers Inc.
頁面84-85
頁數2
ISBN(電子)9781538610169
DOIs
出版狀態Published - 14 10月 2018
事件13th IEEE Nanotechnology Materials and Devices Conference, NMDC 2018 - Portland, 美國
持續時間: 14 10月 201817 10月 2018

出版系列

名字IEEE Nanotechnology Materials and Devices Conference
發行者IEEE
ISSN(列印)2378-377X

Conference

Conference13th IEEE Nanotechnology Materials and Devices Conference, NMDC 2018
國家/地區美國
城市Portland
期間14/10/1817/10/18

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