High charge storage characteristics of CeO2 nanocrystals for novolatile memory applications

Shao Ming Yang; Jiun Jia Huango; Chao-Hsin Chien; Pei Jer Taeng; Lurng Shehng Lee; Ming Jinn Tsai; Tan Fu Lei

doi:10.1109/VTSA.2008.4530792

High charge storage characteristics of CeO₂ nanocrystals for novolatile memory applications

Shao Ming Yang^*
, Jiun Jia Huango
, Chao-Hsin Chien
, Pei Jer Taeng
, Lurng Shehng Lee
, Ming Jinn Tsai
, Tan Fu Lei

^*此作品的通信作者

研究成果: Conference contribution › 同行評審

摘要

This paper presents the formation of CeO₂ nanocrystals on SiO₂ tunneling layer and its annealing effect to the nonvolatile memory device. The characteristics including the program/erase behaviors, data retention, and endurance of Silicon-Oxide-Nitride-Oxide-Silicon type memories embedded with cerium oxide (CeO₂) nanocrystals were studieded to demonstrate its advantages as a nonvolatile memory device.

原文	English
主出版物標題	2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA
頁面	48-49
頁數	2
DOIs	https://doi.org/10.1109/VTSA.2008.4530792
出版狀態	Published - 14 8月 2008
事件	2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Hsinchu, 台灣持續時間: 21 4月 2008 → 23 4月 2008

出版系列

名字	International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference	2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA
國家/地區	台灣
城市	Hsinchu
期間	21/04/08 → 23/04/08

存取文件

10.1109/VTSA.2008.4530792

其它文件與鏈接

Link to publication in Scopus

引用此

Yang, S. M., Huango, J. J., Chien, C.-H., Taeng, P. J., Lee, L. S., Tsai, M. J., & Lei, T. F. (2008). High charge storage characteristics of CeO₂ nanocrystals for novolatile memory applications. 於 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA (頁 48-49). 文章 4530792 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2008.4530792

@inproceedings{c52b4d7b0dbf49ada5a408d41b1e3e59,

title = "High charge storage characteristics of CeO2 nanocrystals for novolatile memory applications",

abstract = "This paper presents the formation of CeO2 nanocrystals on SiO2 tunneling layer and its annealing effect to the nonvolatile memory device. The characteristics including the program/erase behaviors, data retention, and endurance of Silicon-Oxide-Nitride-Oxide-Silicon type memories embedded with cerium oxide (CeO2) nanocrystals were studieded to demonstrate its advantages as a nonvolatile memory device.",

author = "Yang, \{Shao Ming\} and Huango, \{Jiun Jia\} and Chao-Hsin Chien and Taeng, \{Pei Jer\} and Lee, \{Lurng Shehng\} and Tsai, \{Ming Jinn\} and Lei, \{Tan Fu\}",

year = "2008",

month = aug,

day = "14",

doi = "10.1109/VTSA.2008.4530792",

language = "English",

isbn = "9781424416158",

series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

pages = "48--49",

booktitle = "2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA",

note = "2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA ; Conference date: 21-04-2008 Through 23-04-2008",

}

Yang, SM, Huango, JJ, Chien, C-H, Taeng, PJ, Lee, LS, Tsai, MJ & Lei, TF 2008, High charge storage characteristics of CeO₂ nanocrystals for novolatile memory applications. 於 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA., 4530792, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, 頁 48-49, 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA, Hsinchu, 台灣, 21/04/08. https://doi.org/10.1109/VTSA.2008.4530792

High charge storage characteristics of CeO₂ nanocrystals for novolatile memory applications. / Yang, Shao Ming; Huango, Jiun Jia; Chien, Chao-Hsin 等.
2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA. 2008. p. 48-49 4530792 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

研究成果: Conference contribution › 同行評審

TY - GEN

T1 - High charge storage characteristics of CeO2 nanocrystals for novolatile memory applications

AU - Yang, Shao Ming

AU - Huango, Jiun Jia

AU - Chien, Chao-Hsin

AU - Taeng, Pei Jer

AU - Lee, Lurng Shehng

AU - Tsai, Ming Jinn

AU - Lei, Tan Fu

PY - 2008/8/14

Y1 - 2008/8/14

N2 - This paper presents the formation of CeO2 nanocrystals on SiO2 tunneling layer and its annealing effect to the nonvolatile memory device. The characteristics including the program/erase behaviors, data retention, and endurance of Silicon-Oxide-Nitride-Oxide-Silicon type memories embedded with cerium oxide (CeO2) nanocrystals were studieded to demonstrate its advantages as a nonvolatile memory device.

AB - This paper presents the formation of CeO2 nanocrystals on SiO2 tunneling layer and its annealing effect to the nonvolatile memory device. The characteristics including the program/erase behaviors, data retention, and endurance of Silicon-Oxide-Nitride-Oxide-Silicon type memories embedded with cerium oxide (CeO2) nanocrystals were studieded to demonstrate its advantages as a nonvolatile memory device.

UR - https://www.scopus.com/pages/publications/49049121019

U2 - 10.1109/VTSA.2008.4530792

DO - 10.1109/VTSA.2008.4530792

M3 - Conference contribution

AN - SCOPUS:49049121019

SN - 9781424416158

T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

SP - 48

EP - 49

BT - 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA

T2 - 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA

Y2 - 21 April 2008 through 23 April 2008

ER -

Yang SM, Huango JJ, Chien CH, Taeng PJ, Lee LS, Tsai MJ 等. High charge storage characteristics of CeO₂ nanocrystals for novolatile memory applications. 於 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA. 2008. p. 48-49. 4530792. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). doi: 10.1109/VTSA.2008.4530792