High capacity memory using oxide based Schottky diode and unipolar resistive array

Yang Shun Fan; Chih Hsiang Chang; Guang Ting Zheng; Che Chia Chang; Po-Tsun Liu

doi:10.1002/sdtp.10063

High capacity memory using oxide based Schottky diode and unipolar resistive array

Yang Shun Fan, Chih Hsiang Chang, Guang Ting Zheng, Che Chia Chang, Po-Tsun Liu

光電工程學系

研究成果: Conference article › 同行評審

摘要

The Al-doped zinc tin oxide based Schottky diode and resistive switching memory (RRAM) were demonstrated. Thanks to the significant improvement on the forward-bias current of proposed AZTO-based Schottky diode by post-deposition annealing, the integration of one diode and one resistor (1D1R) configuration through the SPICE simulation was achieved. Furthermore, the read margin analysis of feasible array size was carried out and 9.4k bits array can be realized by anti-crosstalk properties of the AZTO-based 1D1R devices.

原文	English
頁（從 - 到）	1213-1216
頁數	4
期刊	Digest of Technical Papers - SID International Symposium
卷	46
發行號	1
DOIs	https://doi.org/10.1002/sdtp.10063
出版狀態	Published - 1 6月 2015
事件	2015 SID International Symposium - San Jose, 美國持續時間: 2 6月 2015 → 3 6月 2015

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10.1002/sdtp.10063

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title = "High capacity memory using oxide based Schottky diode and unipolar resistive array",

abstract = "The Al-doped zinc tin oxide based Schottky diode and resistive switching memory (RRAM) were demonstrated. Thanks to the significant improvement on the forward-bias current of proposed AZTO-based Schottky diode by post-deposition annealing, the integration of one diode and one resistor (1D1R) configuration through the SPICE simulation was achieved. Furthermore, the read margin analysis of feasible array size was carried out and 9.4k bits array can be realized by anti-crosstalk properties of the AZTO-based 1D1R devices.",

keywords = "AZTO, RRAM, Read margin, Resistive switching, Schottky diode",

author = "Fan, {Yang Shun} and Chang, {Chih Hsiang} and Zheng, {Guang Ting} and Chang, {Che Chia} and Po-Tsun Liu",

year = "2015",

month = jun,

day = "1",

doi = "10.1002/sdtp.10063",

language = "English",

volume = "46",

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T1 - High capacity memory using oxide based Schottky diode and unipolar resistive array

AU - Fan, Yang Shun

AU - Chang, Chih Hsiang

AU - Zheng, Guang Ting

AU - Chang, Che Chia

AU - Liu, Po-Tsun

PY - 2015/6/1

Y1 - 2015/6/1

N2 - The Al-doped zinc tin oxide based Schottky diode and resistive switching memory (RRAM) were demonstrated. Thanks to the significant improvement on the forward-bias current of proposed AZTO-based Schottky diode by post-deposition annealing, the integration of one diode and one resistor (1D1R) configuration through the SPICE simulation was achieved. Furthermore, the read margin analysis of feasible array size was carried out and 9.4k bits array can be realized by anti-crosstalk properties of the AZTO-based 1D1R devices.

AB - The Al-doped zinc tin oxide based Schottky diode and resistive switching memory (RRAM) were demonstrated. Thanks to the significant improvement on the forward-bias current of proposed AZTO-based Schottky diode by post-deposition annealing, the integration of one diode and one resistor (1D1R) configuration through the SPICE simulation was achieved. Furthermore, the read margin analysis of feasible array size was carried out and 9.4k bits array can be realized by anti-crosstalk properties of the AZTO-based 1D1R devices.

KW - AZTO

KW - RRAM

KW - Read margin

KW - Resistive switching

KW - Schottky diode

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U2 - 10.1002/sdtp.10063

DO - 10.1002/sdtp.10063

M3 - Conference article

AN - SCOPUS:84962702199

SN - 0097-966X

VL - 46

SP - 1213

EP - 1216

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 1

T2 - 2015 SID International Symposium

Y2 - 2 June 2015 through 3 June 2015

ER -

High capacity memory using oxide based Schottky diode and unipolar resistive array

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