High capacitance density (> 17 fF/μm2) Nb 2O5-based MIM capacitors for future RF IC applications

Sun Jung Kim; Byung Jin Cho; M. B. Yu; M. F. Li; Y. Z. Xiong; C. Zhu; Albert Chin; D. L. Kwong

doi:10.1109/.2005.1469210

High capacitance density (> 17 fF/μm²) Nb ₂O₅-based MIM capacitors for future RF IC applications

Sun Jung Kim^*
, Byung Jin Cho
, M. B. Yu
, M. F. Li
, Y. Z. Xiong
, C. Zhu
, Albert Chin
, D. L. Kwong

^*此作品的通信作者

研究成果: Conference article › 同行評審

36 引文斯高帕斯（Scopus）

摘要

MIM capacitor with niobium pentoxide (Nb₂O₂) dielectric whose K value is higher than 40, is successfully demonstrated for RF bypass capacitor application. Nb₂O₅ MIM with HfO ₂/Al₂O₃ barriers delivers a record high capacitance density >17 fF/μm² with excellent reliability and RF properties, while maintaining comparable leakage current with other high-K dielectrics. It is demonstrated that the high capacitance values can be stable up to 20 GHz when it is integrated into Cu-BEOL process.

原文	English
文章編號	1469210
頁（從 - 到）	56-57
頁數	2
期刊	Digest of Technical Papers - Symposium on VLSI Technology
卷	2005
DOIs	https://doi.org/10.1109/.2005.1469210
出版狀態	Published - 2005
事件	2005 Symposium on VLSI Technology - Kyoto, 日本持續時間: 14 6月 2005 → 14 6月 2005

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10.1109/.2005.1469210

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@article{b8aca94b1a9448e49f8347389fcc4a8f,

title = "High capacitance density (> 17 fF/μm2) Nb 2O5-based MIM capacitors for future RF IC applications",

abstract = "MIM capacitor with niobium pentoxide (Nb2O2) dielectric whose K value is higher than 40, is successfully demonstrated for RF bypass capacitor application. Nb2O5 MIM with HfO 2/Al2O3 barriers delivers a record high capacitance density >17 fF/μm2 with excellent reliability and RF properties, while maintaining comparable leakage current with other high-K dielectrics. It is demonstrated that the high capacitance values can be stable up to 20 GHz when it is integrated into Cu-BEOL process.",

author = "Kim, \{Sun Jung\} and Cho, \{Byung Jin\} and Yu, \{M. B.\} and Li, \{M. F.\} and Xiong, \{Y. Z.\} and C. Zhu and Albert Chin and Kwong, \{D. L.\}",

year = "2005",

doi = "10.1109/.2005.1469210",

language = "English",

volume = "2005",

pages = "56--57",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

issn = "0743-1562",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "2005 Symposium on VLSI Technology ; Conference date: 14-06-2005 Through 14-06-2005",

}

TY - JOUR

T1 - High capacitance density (> 17 fF/μm2) Nb 2O5-based MIM capacitors for future RF IC applications

AU - Kim, Sun Jung

AU - Cho, Byung Jin

AU - Yu, M. B.

AU - Li, M. F.

AU - Xiong, Y. Z.

AU - Zhu, C.

AU - Chin, Albert

AU - Kwong, D. L.

PY - 2005

Y1 - 2005

N2 - MIM capacitor with niobium pentoxide (Nb2O2) dielectric whose K value is higher than 40, is successfully demonstrated for RF bypass capacitor application. Nb2O5 MIM with HfO 2/Al2O3 barriers delivers a record high capacitance density >17 fF/μm2 with excellent reliability and RF properties, while maintaining comparable leakage current with other high-K dielectrics. It is demonstrated that the high capacitance values can be stable up to 20 GHz when it is integrated into Cu-BEOL process.

AB - MIM capacitor with niobium pentoxide (Nb2O2) dielectric whose K value is higher than 40, is successfully demonstrated for RF bypass capacitor application. Nb2O5 MIM with HfO 2/Al2O3 barriers delivers a record high capacitance density >17 fF/μm2 with excellent reliability and RF properties, while maintaining comparable leakage current with other high-K dielectrics. It is demonstrated that the high capacitance values can be stable up to 20 GHz when it is integrated into Cu-BEOL process.

UR - https://www.scopus.com/pages/publications/33745156470

U2 - 10.1109/.2005.1469210

DO - 10.1109/.2005.1469210

M3 - Conference article

AN - SCOPUS:33745156470

SN - 0743-1562

VL - 2005

SP - 56

EP - 57

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

M1 - 1469210

T2 - 2005 Symposium on VLSI Technology

Y2 - 14 June 2005 through 14 June 2005

ER -

High capacitance density (> 17 fF/μm2) Nb 2O5-based MIM capacitors for future RF IC applications

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High capacitance density (> 17 fF/μm²) Nb ₂O₅-based MIM capacitors for future RF IC applications