High capacitance density (> 17 fF/μm2) Nb 2O5-based MIM capacitors for future RF IC applications

Sun Jung Kim; Byung Jin Cho; M. B. Yu; M. F. Li; Y. Z. Xiong; C. Zhu; Albert Chin; D. L. Kwong

doi:10.1109/.2005.1469210

High capacitance density (> 17 fF/μm²) Nb ₂O₅-based MIM capacitors for future RF IC applications

Sun Jung Kim^*, Byung Jin Cho, M. B. Yu, M. F. Li, Y. Z. Xiong, C. Zhu, Albert Chin, D. L. Kwong

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研究成果 › 同行評審

36 引文斯高帕斯（Scopus）

摘要

MIM capacitor with niobium pentoxide (Nb₂O₂) dielectric whose K value is higher than 40, is successfully demonstrated for RF bypass capacitor application. Nb₂O₅ MIM with HfO ₂/Al₂O₃ barriers delivers a record high capacitance density >17 fF/μm² with excellent reliability and RF properties, while maintaining comparable leakage current with other high-K dielectrics. It is demonstrated that the high capacitance values can be stable up to 20 GHz when it is integrated into Cu-BEOL process.

原文	English
文章編號	1469210
頁（從 - 到）	56-57
頁數	2
期刊	Digest of Technical Papers - Symposium on VLSI Technology
卷	2005
DOIs	https://doi.org/10.1109/.2005.1469210
出版狀態	Published - 1 12月 2005
事件	2005 Symposium on VLSI Technology - Kyoto, 日本持續時間: 14 6月 2005 → 14 6月 2005

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title = "High capacitance density (> 17 fF/μm2) Nb 2O5-based MIM capacitors for future RF IC applications",

abstract = "MIM capacitor with niobium pentoxide (Nb2O2) dielectric whose K value is higher than 40, is successfully demonstrated for RF bypass capacitor application. Nb2O5 MIM with HfO 2/Al2O3 barriers delivers a record high capacitance density >17 fF/μm2 with excellent reliability and RF properties, while maintaining comparable leakage current with other high-K dielectrics. It is demonstrated that the high capacitance values can be stable up to 20 GHz when it is integrated into Cu-BEOL process.",

author = "Kim, {Sun Jung} and Cho, {Byung Jin} and Yu, {M. B.} and Li, {M. F.} and Xiong, {Y. Z.} and C. Zhu and Albert Chin and Kwong, {D. L.}",

year = "2005",

month = dec,

day = "1",

doi = "10.1109/.2005.1469210",

language = "English",

volume = "2005",

pages = "56--57",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

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note = "2005 Symposium on VLSI Technology ; Conference date: 14-06-2005 Through 14-06-2005",

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TY - JOUR

T1 - High capacitance density (> 17 fF/μm2) Nb 2O5-based MIM capacitors for future RF IC applications

AU - Kim, Sun Jung

AU - Cho, Byung Jin

AU - Yu, M. B.

AU - Li, M. F.

AU - Xiong, Y. Z.

AU - Zhu, C.

AU - Chin, Albert

AU - Kwong, D. L.

PY - 2005/12/1

Y1 - 2005/12/1

N2 - MIM capacitor with niobium pentoxide (Nb2O2) dielectric whose K value is higher than 40, is successfully demonstrated for RF bypass capacitor application. Nb2O5 MIM with HfO 2/Al2O3 barriers delivers a record high capacitance density >17 fF/μm2 with excellent reliability and RF properties, while maintaining comparable leakage current with other high-K dielectrics. It is demonstrated that the high capacitance values can be stable up to 20 GHz when it is integrated into Cu-BEOL process.

AB - MIM capacitor with niobium pentoxide (Nb2O2) dielectric whose K value is higher than 40, is successfully demonstrated for RF bypass capacitor application. Nb2O5 MIM with HfO 2/Al2O3 barriers delivers a record high capacitance density >17 fF/μm2 with excellent reliability and RF properties, while maintaining comparable leakage current with other high-K dielectrics. It is demonstrated that the high capacitance values can be stable up to 20 GHz when it is integrated into Cu-BEOL process.

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U2 - 10.1109/.2005.1469210

DO - 10.1109/.2005.1469210

M3 - Conference article

AN - SCOPUS:33745156470

SN - 0743-1562

VL - 2005

SP - 56

EP - 57

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

M1 - 1469210

T2 - 2005 Symposium on VLSI Technology

Y2 - 14 June 2005 through 14 June 2005

ER -

High capacitance density (> 17 fF/μm2) Nb 2O5-based MIM capacitors for future RF IC applications

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High capacitance density (> 17 fF/μm²) Nb ₂O₅-based MIM capacitors for future RF IC applications