The n+-InGaN/GaN short-period-superlattice (SPS) structures were applied on nitride-based blue light emitting diodes (LEDs) as tunneling layers. The ITO films combined with the n+-InGaN SPS tunneling layer could provide us an extremely high transparency (i.e. 93% at 465 nm) and a reasonably small 1.4 × 10-3 Ω cm2 specific contact resistance. The 20 mA forward voltage of the LED with ITO on n+-SPS upper contact was slightly higher than that of the LED with Ni/Au on n +-SPS upper contact, however, a 8.4 mW larger output power and 13.9% external quantum efficiency (Q.E.) could be obtained by using such an ITO on n+-SPS upper contact.
|頁（從 - 到）||2227-2231|
|期刊||Physica Status Solidi C: Conferences|
|出版狀態||Published - 1 12月 2003|
|事件||5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan|
持續時間: 25 5月 2003 → 30 5月 2003