High brightness InGaN/GaN LEDs with indium-tin-oxide as p-electrode

C. S. Chang; S. J. Chang; Y. K. Su; W. C. Lai; Cheng-Huang Kuo; C. K. Wang; Y. C. Lin; Y. P. Hsu; S. C. Shei; H. M. Lo; J. C. Ke; J. K. Sheu

doi:10.1002/pssc.200303384

High brightness InGaN/GaN LEDs with indium-tin-oxide as p-electrode

C. S. Chang, S. J. Chang^*, Y. K. Su, W. C. Lai, Cheng-Huang Kuo, C. K. Wang, Y. C. Lin, Y. P. Hsu, S. C. Shei, H. M. Lo, J. C. Ke, J. K. Sheu

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照明與能源光電研究所

研究成果: Conference article › 同行評審

5 引文斯高帕斯（Scopus）

摘要

The n⁺-InGaN/GaN short-period-superlattice (SPS) structures were applied on nitride-based blue light emitting diodes (LEDs) as tunneling layers. The ITO films combined with the n⁺-InGaN SPS tunneling layer could provide us an extremely high transparency (i.e. 93% at 465 nm) and a reasonably small 1.4 × 10^-3 Ω cm² specific contact resistance. The 20 mA forward voltage of the LED with ITO on n⁺-SPS upper contact was slightly higher than that of the LED with Ni/Au on n ⁺-SPS upper contact, however, a 8.4 mW larger output power and 13.9% external quantum efficiency (Q.E.) could be obtained by using such an ITO on n⁺-SPS upper contact.

原文	English
頁（從 - 到）	2227-2231
頁數	5
期刊	Physica Status Solidi C: Conferences
發行號	7
DOIs	https://doi.org/10.1002/pssc.200303384
出版狀態	Published - 1 12月 2003
事件	5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan 持續時間: 25 5月 2003 → 30 5月 2003

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10.1002/pssc.200303384

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@article{19b337b282894d1784dabc297e5f59bf,

title = "High brightness InGaN/GaN LEDs with indium-tin-oxide as p-electrode",

abstract = "The n+-InGaN/GaN short-period-superlattice (SPS) structures were applied on nitride-based blue light emitting diodes (LEDs) as tunneling layers. The ITO films combined with the n+-InGaN SPS tunneling layer could provide us an extremely high transparency (i.e. 93% at 465 nm) and a reasonably small 1.4 × 10-3 Ω cm2 specific contact resistance. The 20 mA forward voltage of the LED with ITO on n+-SPS upper contact was slightly higher than that of the LED with Ni/Au on n +-SPS upper contact, however, a 8.4 mW larger output power and 13.9% external quantum efficiency (Q.E.) could be obtained by using such an ITO on n+-SPS upper contact.",

author = "Chang, {C. S.} and Chang, {S. J.} and Su, {Y. K.} and Lai, {W. C.} and Cheng-Huang Kuo and Wang, {C. K.} and Lin, {Y. C.} and Hsu, {Y. P.} and Shei, {S. C.} and Lo, {H. M.} and Ke, {J. C.} and Sheu, {J. K.}",

year = "2003",

month = dec,

day = "1",

doi = "10.1002/pssc.200303384",

language = "English",

pages = "2227--2231",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "7",

note = "5th International Conference on Nitride Semiconductors, ICNS 2003 ; Conference date: 25-05-2003 Through 30-05-2003",

}

TY - JOUR

T1 - High brightness InGaN/GaN LEDs with indium-tin-oxide as p-electrode

AU - Chang, C. S.

AU - Chang, S. J.

AU - Su, Y. K.

AU - Lai, W. C.

AU - Kuo, Cheng-Huang

AU - Wang, C. K.

AU - Lin, Y. C.

AU - Hsu, Y. P.

AU - Shei, S. C.

AU - Lo, H. M.

AU - Ke, J. C.

AU - Sheu, J. K.

PY - 2003/12/1

Y1 - 2003/12/1

N2 - The n+-InGaN/GaN short-period-superlattice (SPS) structures were applied on nitride-based blue light emitting diodes (LEDs) as tunneling layers. The ITO films combined with the n+-InGaN SPS tunneling layer could provide us an extremely high transparency (i.e. 93% at 465 nm) and a reasonably small 1.4 × 10-3 Ω cm2 specific contact resistance. The 20 mA forward voltage of the LED with ITO on n+-SPS upper contact was slightly higher than that of the LED with Ni/Au on n +-SPS upper contact, however, a 8.4 mW larger output power and 13.9% external quantum efficiency (Q.E.) could be obtained by using such an ITO on n+-SPS upper contact.

AB - The n+-InGaN/GaN short-period-superlattice (SPS) structures were applied on nitride-based blue light emitting diodes (LEDs) as tunneling layers. The ITO films combined with the n+-InGaN SPS tunneling layer could provide us an extremely high transparency (i.e. 93% at 465 nm) and a reasonably small 1.4 × 10-3 Ω cm2 specific contact resistance. The 20 mA forward voltage of the LED with ITO on n+-SPS upper contact was slightly higher than that of the LED with Ni/Au on n +-SPS upper contact, however, a 8.4 mW larger output power and 13.9% external quantum efficiency (Q.E.) could be obtained by using such an ITO on n+-SPS upper contact.

UR - http://www.scopus.com/inward/record.url?scp=34548623621&partnerID=8YFLogxK

U2 - 10.1002/pssc.200303384

DO - 10.1002/pssc.200303384

M3 - Conference article

AN - SCOPUS:34548623621

SN - 1862-6351

SP - 2227

EP - 2231

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 7

T2 - 5th International Conference on Nitride Semiconductors, ICNS 2003

Y2 - 25 May 2003 through 30 May 2003

ER -

High brightness InGaN/GaN LEDs with indium-tin-oxide as p-electrode

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