摘要
The n+-InGaN/GaN short-period-superlattice (SPS) structures were applied on nitride-based blue light emitting diodes (LEDs) as tunneling layers. The ITO films combined with the n+-InGaN SPS tunneling layer could provide us an extremely high transparency (i.e. 93% at 465 nm) and a reasonably small 1.4 × 10-3 Ω cm2 specific contact resistance. The 20 mA forward voltage of the LED with ITO on n+-SPS upper contact was slightly higher than that of the LED with Ni/Au on n +-SPS upper contact, however, a 8.4 mW larger output power and 13.9% external quantum efficiency (Q.E.) could be obtained by using such an ITO on n+-SPS upper contact.
原文 | English |
---|---|
頁(從 - 到) | 2227-2231 |
頁數 | 5 |
期刊 | Physica Status Solidi C: Conferences |
發行號 | 7 |
DOIs | |
出版狀態 | Published - 2003 |
事件 | 5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, 日本 持續時間: 25 5月 2003 → 30 5月 2003 |