High brightness InGaN/GaN LEDs with indium-tin-oxide as p-electrode

C. S. Chang, S. J. Chang*, Y. K. Su, W. C. Lai, Cheng-Huang Kuo, C. K. Wang, Y. C. Lin, Y. P. Hsu, S. C. Shei, H. M. Lo, J. C. Ke, J. K. Sheu


研究成果: Conference article同行評審

5 引文 斯高帕斯(Scopus)


The n+-InGaN/GaN short-period-superlattice (SPS) structures were applied on nitride-based blue light emitting diodes (LEDs) as tunneling layers. The ITO films combined with the n+-InGaN SPS tunneling layer could provide us an extremely high transparency (i.e. 93% at 465 nm) and a reasonably small 1.4 × 10-3 Ω cm2 specific contact resistance. The 20 mA forward voltage of the LED with ITO on n+-SPS upper contact was slightly higher than that of the LED with Ni/Au on n +-SPS upper contact, however, a 8.4 mW larger output power and 13.9% external quantum efficiency (Q.E.) could be obtained by using such an ITO on n+-SPS upper contact.

頁(從 - 到)2227-2231
期刊Physica Status Solidi C: Conferences
出版狀態Published - 2003
事件5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan
持續時間: 25 5月 200330 5月 2003


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