High Brightness InGaN Green LEDs with an ITO on n++ -SPS Upper Contact

C. S. Chang; S. J. Chang; Y. K. Su; Cheng-Huang Kuo; W. C. Lai; Y. C. Lin; Y. P. Hsu; S. C. Shei; J. M. Tsai; H. M. Lo; J. C. Ke; J. K. Sheu

doi:10.1109/TED.2003.819091

High Brightness InGaN Green LEDs with an ITO on n⁺⁺ -SPS Upper Contact

C. S. Chang^*, S. J. Chang, Y. K. Su, Cheng-Huang Kuo, W. C. Lai, Y. C. Lin, Y. P. Hsu, S. C. Shei, J. M. Tsai, H. M. Lo, J. C. Ke, J. K. Sheu

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照明與能源光電研究所

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摘要

Indium tin oxide (ITO) (260 nm) and Ni (5 nm)/Au (10 nm) films were deposited onto glass substrates, p-GaN layers, n⁺ -InGaN/GaN short-period-superlattice (SPS), n⁺⁺ -SPS and nitride-based green light-emitting diodes (LEDs). It was found that ITO could provide us an extremely high transparency (i.e., 95% at 520 nm). It was also found that the 1.03 × 10^-3 ωcm² specific contact resistance of ITO on n⁺⁺ -SPS was reasonably small. Although forward voltage of the LED with ITO on n⁺⁺ -SPS upper contact was slightly higher than that of the LED with Ni/Au on n⁺⁺ -SPS upper contact, 20 Ma output power and external quantum efficiency of the green LED with ITO on n ⁺⁺ -SPS upper contact could reach 4.98 m W and 8.2%, respectively, which were much larger than those observed from the green LED with Ni/Au on n⁺⁺ -SPS upper contact. The reliability of ITO on n⁺⁺ -SPS upper contact was also found to be reasonably good.

原文	English
頁（從 - 到）	2208-2212
頁數	5
期刊	IEEE Transactions on Electron Devices
卷	50
發行號	11
DOIs	https://doi.org/10.1109/TED.2003.819091
出版狀態	Published - 1 11月 2003

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10.1109/TED.2003.819091

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@article{73ad4d0a15824e439e59a9fe17b93158,

title = "High Brightness InGaN Green LEDs with an ITO on n++ -SPS Upper Contact",

abstract = "Indium tin oxide (ITO) (260 nm) and Ni (5 nm)/Au (10 nm) films were deposited onto glass substrates, p-GaN layers, n+ -InGaN/GaN short-period-superlattice (SPS), n++ -SPS and nitride-based green light-emitting diodes (LEDs). It was found that ITO could provide us an extremely high transparency (i.e., 95% at 520 nm). It was also found that the 1.03 × 10-3 ωcm2 specific contact resistance of ITO on n++ -SPS was reasonably small. Although forward voltage of the LED with ITO on n++ -SPS upper contact was slightly higher than that of the LED with Ni/Au on n++ -SPS upper contact, 20 Ma output power and external quantum efficiency of the green LED with ITO on n ++ -SPS upper contact could reach 4.98 m W and 8.2%, respectively, which were much larger than those observed from the green LED with Ni/Au on n++ -SPS upper contact. The reliability of ITO on n++ -SPS upper contact was also found to be reasonably good.",

keywords = "GaN, Green light-emitting diode (LED), Indium tin oxide (ITO), Short-period superlattice (SPS)",

author = "Chang, {C. S.} and Chang, {S. J.} and Su, {Y. K.} and Cheng-Huang Kuo and Lai, {W. C.} and Lin, {Y. C.} and Hsu, {Y. P.} and Shei, {S. C.} and Tsai, {J. M.} and Lo, {H. M.} and Ke, {J. C.} and Sheu, {J. K.}",

year = "2003",

month = nov,

day = "1",

doi = "10.1109/TED.2003.819091",

language = "English",

volume = "50",

pages = "2208--2212",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

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TY - JOUR

T1 - High Brightness InGaN Green LEDs with an ITO on n++ -SPS Upper Contact

AU - Chang, C. S.

AU - Chang, S. J.

AU - Su, Y. K.

AU - Kuo, Cheng-Huang

AU - Lai, W. C.

AU - Lin, Y. C.

AU - Hsu, Y. P.

AU - Shei, S. C.

AU - Tsai, J. M.

AU - Lo, H. M.

AU - Ke, J. C.

AU - Sheu, J. K.

PY - 2003/11/1

Y1 - 2003/11/1

N2 - Indium tin oxide (ITO) (260 nm) and Ni (5 nm)/Au (10 nm) films were deposited onto glass substrates, p-GaN layers, n+ -InGaN/GaN short-period-superlattice (SPS), n++ -SPS and nitride-based green light-emitting diodes (LEDs). It was found that ITO could provide us an extremely high transparency (i.e., 95% at 520 nm). It was also found that the 1.03 × 10-3 ωcm2 specific contact resistance of ITO on n++ -SPS was reasonably small. Although forward voltage of the LED with ITO on n++ -SPS upper contact was slightly higher than that of the LED with Ni/Au on n++ -SPS upper contact, 20 Ma output power and external quantum efficiency of the green LED with ITO on n ++ -SPS upper contact could reach 4.98 m W and 8.2%, respectively, which were much larger than those observed from the green LED with Ni/Au on n++ -SPS upper contact. The reliability of ITO on n++ -SPS upper contact was also found to be reasonably good.

AB - Indium tin oxide (ITO) (260 nm) and Ni (5 nm)/Au (10 nm) films were deposited onto glass substrates, p-GaN layers, n+ -InGaN/GaN short-period-superlattice (SPS), n++ -SPS and nitride-based green light-emitting diodes (LEDs). It was found that ITO could provide us an extremely high transparency (i.e., 95% at 520 nm). It was also found that the 1.03 × 10-3 ωcm2 specific contact resistance of ITO on n++ -SPS was reasonably small. Although forward voltage of the LED with ITO on n++ -SPS upper contact was slightly higher than that of the LED with Ni/Au on n++ -SPS upper contact, 20 Ma output power and external quantum efficiency of the green LED with ITO on n ++ -SPS upper contact could reach 4.98 m W and 8.2%, respectively, which were much larger than those observed from the green LED with Ni/Au on n++ -SPS upper contact. The reliability of ITO on n++ -SPS upper contact was also found to be reasonably good.

KW - GaN

KW - Green light-emitting diode (LED)

KW - Indium tin oxide (ITO)

KW - Short-period superlattice (SPS)

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U2 - 10.1109/TED.2003.819091

DO - 10.1109/TED.2003.819091

M3 - Article

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SN - 0018-9383

VL - 50

SP - 2208

EP - 2212

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 11

ER -

High Brightness InGaN Green LEDs with an ITO on n++ -SPS Upper Contact

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High Brightness InGaN Green LEDs with an ITO on n⁺⁺ -SPS Upper Contact