High-κEu2O3 and Y2O3 poly-Si thin-film transistor nonvolatile memory devices

Tung Ming Pan, Li Chen Yen, Sheng Hao Huang, Chieh Ting Lo, Tien-Sheng Chao

研究成果: Article同行評審

6 引文 斯高帕斯(Scopus)

摘要

In this paper, we have successfully fabricated low-temperature polycrystalline silicon thin-film transistor (LTPS-TFT) nonvolatile memory devices employing high-κEu2O3 and Y 2O3 films as the charge trapping layer. The LTPS-TFT memory device uses band-to-band tunneling-induced hot hole injection and gate Fowler-Nordheim injection as the program and erase methods, respectively. Compared with the Y2O3 film, the LTPS-TFT memory device using an Eu2O3 charge-trapping layer exhibited a lower subthreshold swing and a larger memory window, a smaller charge loss, and a better endurance performance, presumably because of the higher charge-trapping efficiency of the Eu2O3 film.

原文English
文章編號6523940
頁(從 - 到)2251-2255
頁數5
期刊IEEE Transactions on Electron Devices
60
發行號7
DOIs
出版狀態Published - 15 7月 2013

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