In this paper, fully depleted silicon-on-insulator (SOI) devices with source/drain extension shifts and a high-κ offset spacers were investigated in detail. The calculated results show that the source/drain extension shift can decrease off-state leakage current Ioff significantly by utilizing the extra electron barrier height in the source/drain extension shift region to reduce standby power dissipation. However, the on-state driving current Ion is also sacrificed simultaneously. To overcome this drawback, a high-κ offset spacer is used to increase the on-state driving current Ion effectively by enhancing the vertical fringing electric field which elevates the channel voltage drop and reduces series resistance.
|頁（從 - 到）||8656-8658|
|期刊||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版狀態||Published - 15 11月 2006|