High-κ material sidewall with source/drain-to-gate non-overlapped structure for low standby power applications

Ming Wen Ma*, Tien-Sheng Chao, Kuo Hsing Kao, Jyun Siang Huang, Tan Fu Lei

*此作品的通信作者

研究成果: Article同行評審

摘要

In this paper, fully depleted silicon-on-insulator (SOI) devices with source/drain extension shifts and a high-κ offset spacers were investigated in detail. The calculated results show that the source/drain extension shift can decrease off-state leakage current Ioff significantly by utilizing the extra electron barrier height in the source/drain extension shift region to reduce standby power dissipation. However, the on-state driving current Ion is also sacrificed simultaneously. To overcome this drawback, a high-κ offset spacer is used to increase the on-state driving current Ion effectively by enhancing the vertical fringing electric field which elevates the channel voltage drop and reduces series resistance.

原文English
頁(從 - 到)8656-8658
頁數3
期刊Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
45
發行號11
DOIs
出版狀態Published - 15 11月 2006

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