High-κ Ir/TiTaO/TaN capacitors suitable for analog IC applications

K. C. Chiang*, C. C. Huang, Albert Chin, W. J. Chen, S. P. McAlister, H. F. Chiu, Jiann Ruey Chen, C. C. Chi

*此作品的通信作者

研究成果: Article同行評審

37 引文 斯高帕斯(Scopus)

摘要

We have developed novel high-K Ir/TiTaO/TaN capacitors which have high-capacitance density (10.3 fF/μm 2 ), small leakage current at 2 V (1.2 × 10 -8 A/cm 2 ), and low voltage linearity of the capacitance (89 ppm/V 2 ). These excellent results meet the ITRS roadmap requirements for precision analog capacitors for the year 2018. The good performance is due to the very high (45) achieved in the TiTaO dielectric and the high work-function (5.2 eV) provided by the Ir electrode.

原文English
頁(從 - 到)504-506
頁數3
期刊IEEE Electron Device Letters
26
發行號7
DOIs
出版狀態Published - 1 七月 2005

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