Heterogeneous Integration of Atomically-Thin Indium Tungsten Oxide Transistors for Low-Power 3D Monolithic Complementary Inverter

Keyphrases

• Low Power 100%
• Thin-film Transistors 100%
• Atomically Thin 100%
• Heterogeneous Integration 100%
• Indium Tungsten Oxide 100%
• Monolithic 3-D (M3-D) 100%
• Complementary Inverter 100%
• Oxide Transistor 100%
• N-channel 66%
• Inverter 66%
• P-channel 66%
• Semiconductor Technology 66%
• Vertically Stacked 66%
• Polysilicon 33%
• On-state Current 33%
• Electrical Characteristics 33%
• Supply Voltage 33%
• Low Voltage 33%
• Polycrystalline Silicon Thin-film Transistors (poly-Si TFTs) 33%
• Atomic Layers 33%
• Current Ratio 33%
• Subthreshold Swing 33%
• High Voltage Gain 33%
• High Energy Efficiency 33%
• Low Leakage Current 33%
• Complementary Metal Oxide Semiconductor 33%
• Passivation Layer 33%
• High Stability 33%
• Technology Application 33%
• Low Contact Resistance 33%
• Small Hysteresis 33%
• Energy Band Gap 33%
• High Mobility 33%
• Channel Thickness 33%
• Thin Channel 33%
• Planar Structure 33%
• Noise Margin 33%
• Static Power Consumption 33%
• Low Footprint 33%
• DEC1 33%
• Picowatt 33%
• Next-generation Semiconductor 33%
• Complementary Field-effect Transistors 33%

Material Science

• Transistor 100%
• Oxide Compound 100%
• Thin-Film Transistor 100%
• Indium 100%
• Tungsten 100%
• Silicon 50%
• Density 25%
• Electrical Property 25%
• Field Effect Transistor 25%
• Electronic Circuit 25%
• Contact Resistance 25%

Engineering

• Thin-Film Transistor 100%
• Inverter 100%
• Supply Voltage 50%
• Polysilicon 50%
• Field-Effect Transistor 25%
• Electric Power Utilization 25%
• Current Ratio 25%
• Atomic Layer 25%
• Passivation Layer 25%
• Technology Application 25%
• Noise Margin 25%
• High Energy Efficiency 25%
• Planar Structure 25%
• Band Gap 25%