Heteroepitaxially grown homojunction gallium oxide PN diodes using ion implantation technologies

Chih Yang Huang, Xin Ying Tsai, Fu Gow Tarntair, Catherine Langpoklakpam, Thien Sao Ngo, Pei Jung Wang, Yu Cheng Kao, Yi Kai Hsiao, Niall Tumilty, Hao Chung Kuo, Tian Li Wu, Ching Lien Hsiao, Ray Hua Horng*


研究成果: Article同行評審


Although advancements in n- and p-doping of gallium oxide (Ga2O3) are underway, the realization of functional pn diodes remains elusive. Here, we present the successful fabrication of a Ga2O3 pn diode utilizing ion implantation technology. The Ga2O3 epilayers were grown on c-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVD). P-type conductivity Ga2O3 epilayer, confirmed by Hall effect analysis, was achieved by phosphorus (P) ion implantation followed with a rapid thermal annealing (RTA) process. This p-Ga2O3 epilayer reveals a significant reduction in resistivity (<106) compared to undoped Ga2O3, demonstrating the successful inclusion and activation of P within the crystal lattice. X-ray diffraction analysis shows that the Ga2O3 epilayers were grown in high crystal quality. Although the crystallinity of Ga2O3 was slightly degraded after P ion implantation, the structure was recovered to high-quality crystal after RTA treatment. For the device structure, p-type Ga2O3 was formed first, followed n-type Ga2O3 regrowth to create a pn junction diode. The obtained results demonstrate a built-in voltage of 4.8 V, 4.2 V, and 4.308 V from simulation, fabricated pn diodes measured by I–V and C–V, respectively. A high breakdown voltage of 900 V was also obtained for the lateral pn diode grown on sapphire substrate. As concerning temperature stability, I–V curves of Ga2O3 pn diode were measured from 25oC to 150oC in steps of 25 °C. At elevated temperatures, for both forward and reverse biases, consecutive increasing currents were measured. These could be resulted from dominant diffusion and drift currents over recombination current at a given bias. In addition, the reverse current saturated (@V > 3kT/q) and remained very low at 2✕10−8 A, as the diode operated at 150oC. The behavior could be due to Ga2O3 being a wide bandgap material.

期刊Materials Today Advances
出版狀態Published - 6月 2024


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