H-Bridge Derived Topology for Dynamic On-Resistance Evaluation in Power GaN HEMTs

Rustam Kumar, Arnab Sarkar, Sandeep Anand, Amit Verma, Tian Li Wu*

*此作品的通信作者

研究成果: Article同行評審

10 引文 斯高帕斯(Scopus)

摘要

Gallium nitride high electron mobility transistors outperform Silicon devices due to their excellent physical properties. However, being an immature technology, it exhibits dynamic on-state resistance (Rds,on). This causes increased conduction loss and leads to reduced operating efficiency. To evaluate the dynamic Rds,on of the device, a measurement circuit is required. In literature, a standardized double pulse test is widely used for the measurement of Rds,on. However, due to the uncontrolled off-state time and inability to independently adjust, the test conditions result in restricted measurement. This article proposes a measurement circuit of the device in power electronics operations. The circuit uses an H-Bridge-derived topology with capacitive storage to enable forward and reverse conduction mode measurement of the device. In all the modes, the circuit allows measurement from the first switching cycle and independent control over the testing conditions by using a hysteresis current control. The proposed measurement circuit is validated using simulation and experimentation. Finally, analytical efficiency compared with the state-of-the-art measurement circuits is provided.

原文English
頁(從 - 到)1532-1541
頁數10
期刊IEEE Transactions on Industrial Electronics
70
發行號2
DOIs
出版狀態Published - 1 2月 2023

指紋

深入研究「H-Bridge Derived Topology for Dynamic On-Resistance Evaluation in Power GaN HEMTs」主題。共同形成了獨特的指紋。

引用此