Guideline of Device Optimization for Ferroelectric InGaZnO Transistor

Yu Hao Chen, I. Ting Wang*, Yue Min Zheng, Tuo Hung Hou

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

The novel hafnium-zirconium oxide- (HZO-) based ferroelectric field-effect transistor with the InGaZnO channel (IGZO FeFET) has gained increasing interest due to its superior carrier mobility and low process temperature. However, the slow Erase speed is inevitable due to the intrinsic difficulty of IGZO channel inversion. Consequently, the floating of the channel region results in inefficient ferroelectric switching (FS) and an undesirable degradation of both operating speed and memory window. In this work, we provide a comprehensive device optimization guideline to mitigate the channel floating effect and enhance FS in the IGZO FeFET, including the deposition condition, thickness, and length of the IGZO channel.

原文English
主出版物標題7th IEEE Electron Devices Technology and Manufacturing Conference
主出版物子標題Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023
發行者Institute of Electrical and Electronics Engineers Inc.
ISBN(電子)9798350332520
DOIs
出版狀態Published - 2023
事件7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023 - Seoul, Korea, Republic of
持續時間: 7 3月 202310 3月 2023

出版系列

名字7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023

Conference

Conference7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023
國家/地區Korea, Republic of
城市Seoul
期間7/03/2310/03/23

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