@article{de9b4d0c93b64052a0ff5dc145211057,
title = "Growth temperature reduction for isoelectronic As-doped GaN",
abstract = "As-doped GaN films were grown at different temperatures by atmospheric metalorganic chemical vapor deposition. A higher electron Hall mobility, narrower line width in photoluminescence, and longer spatial correlation length of the filmes were obtainable at low growth temperatures compared to undoped GaN grown at the same temperatures as a result of isoelectronic As-doping.",
keywords = "GaN, Hall mobility, Isoelectronic As-doping, Photoluminescence, Raman scattering, Spatial correlation length",
author = "Lee, {Wen Hsiung} and Huang, {Huai Ying} and Chen, {Wei Chung} and Lee, {Chiung Fen} and Wei-Kuo Chen and Chen, {Wen Hsiung} and Lee, {Ming Chih}",
year = "2003",
month = mar,
day = "1",
doi = "10.1143/jjap.42.l239",
language = "English",
volume = "42",
pages = "L239--L242",
journal = "Japanese Journal of Applied Physics, Part 2: Letters",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "3 A",
}