Growth temperature reduction for isoelectronic As-doped GaN

Wen Hsiung Lee*, Huai Ying Huang, Wei Chung Chen, Chiung Fen Lee, Wei-Kuo Chen, Wen Hsiung Chen, Ming Chih Lee


研究成果: Letter同行評審


As-doped GaN films were grown at different temperatures by atmospheric metalorganic chemical vapor deposition. A higher electron Hall mobility, narrower line width in photoluminescence, and longer spatial correlation length of the filmes were obtainable at low growth temperatures compared to undoped GaN grown at the same temperatures as a result of isoelectronic As-doping.

期刊Japanese Journal of Applied Physics, Part 2: Letters
發行號3 A
出版狀態Published - 1 3月 2003


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