TY - GEN
T1 - Growth of vertically aligned ZnO nanorod arrays as anti-reflection layer in silicon solar cell
AU - Chen, J. Y.
AU - Sun, Kien-Wen
PY - 2010
Y1 - 2010
N2 - We have investigated solution-grown ZnO nanorod arrays as the anti-reflection(AR) layer for Si solar cells. The nanorod morphology, controlled through synthetic chemistry, has a great effect on the AR layer performance. We demonstrate that the light harvest efficiency of the solar cells can be greatly improved from 10.4% to 12.8% by using the vertical aligned ZnO nanorod arrays as the AR layer on poly-Si solar cells.
AB - We have investigated solution-grown ZnO nanorod arrays as the anti-reflection(AR) layer for Si solar cells. The nanorod morphology, controlled through synthetic chemistry, has a great effect on the AR layer performance. We demonstrate that the light harvest efficiency of the solar cells can be greatly improved from 10.4% to 12.8% by using the vertical aligned ZnO nanorod arrays as the AR layer on poly-Si solar cells.
UR - http://www.scopus.com/inward/record.url?scp=77951660983&partnerID=8YFLogxK
U2 - 10.1109/INEC.2010.5425023
DO - 10.1109/INEC.2010.5425023
M3 - Conference contribution
AN - SCOPUS:77951660983
SN - 9781424435449
T3 - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
SP - 1078
EP - 1079
BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
T2 - 2010 3rd International Nanoelectronics Conference, INEC 2010
Y2 - 3 January 2010 through 8 January 2010
ER -
