Growth of III-V Antimonide Heterostructure Nanowires on Silicon Substrate for Esaki Tunnel Diode

Deepak Anandan, Che Wei Hsu, Edward Yi Chang*

*此作品的通信作者

研究成果: Conference contribution同行評審

摘要

Integration of low bandgap antimonide based nanowires on Si substrate has been attracting huge attention for opto-electronic applications. In this work we demonstrated InAs/InSb and InAs/GaSb heterostructure nanowires on Si substrate by metal organic chemical vapor deposition. We grew high quality axial InSb heterostructure segment on InAs stem by self-catalyzed growth technique, which paves a way to tune the crystal structure of InSb. In case of InAs-GaSb core-shell architecture, GaSb crystal quality highly depends on InAs core. We successfully demonstrated basic Esaki tunnel diode using InAs-GaSb core-shell nanowire, which exhibits negative differential resistance at 0.8 V and peak-to-valley current ratio of 3.84.

原文English
主出版物標題Nanomaterials and Nanotechnology for Sustainable Development - Selected peer-reviewed full text papers from the 2nd Nanotechnology Malaysia Biennial Symposium, NanoSym 2021
編輯Mohd Ambri Mohamed, Dilla Duryha Berhanuddin, Azrul Azlan Hamzah
發行者Trans Tech Publications Ltd
頁面1-6
頁數6
ISBN(列印)9783035716757
DOIs
出版狀態Published - 2022
事件2nd Nanotechnology Malaysia Biennial Symposium, NanoSym 2021 - Virtual, Online
持續時間: 11 10月 202113 10月 2021

出版系列

名字Materials Science Forum
1055 MSF
ISSN(列印)0255-5476
ISSN(電子)1662-9752

Conference

Conference2nd Nanotechnology Malaysia Biennial Symposium, NanoSym 2021
城市Virtual, Online
期間11/10/2113/10/21

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