@inproceedings{1974a1b308cb4570bfbf38b0d4f9d848,
title = "Growth of III-V Antimonide Heterostructure Nanowires on Silicon Substrate for Esaki Tunnel Diode",
abstract = "Integration of low bandgap antimonide based nanowires on Si substrate has been attracting huge attention for opto-electronic applications. In this work we demonstrated InAs/InSb and InAs/GaSb heterostructure nanowires on Si substrate by metal organic chemical vapor deposition. We grew high quality axial InSb heterostructure segment on InAs stem by self-catalyzed growth technique, which paves a way to tune the crystal structure of InSb. In case of InAs-GaSb core-shell architecture, GaSb crystal quality highly depends on InAs core. We successfully demonstrated basic Esaki tunnel diode using InAs-GaSb core-shell nanowire, which exhibits negative differential resistance at 0.8 V and peak-to-valley current ratio of 3.84.",
keywords = "Core-shell, InAs/GaSb, InAs/InSb, Nanowire, Negative differential resistance, Tunnel diode",
author = "Deepak Anandan and Hsu, {Che Wei} and Chang, {Edward Yi}",
note = "Publisher Copyright: {\textcopyright} 2022 Trans Tech Publications Ltd, Switzerland.; 2nd Nanotechnology Malaysia Biennial Symposium, NanoSym 2021 ; Conference date: 11-10-2021 Through 13-10-2021",
year = "2022",
doi = "10.4028/p-y19917",
language = "English",
isbn = "9783035716757",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd.",
pages = "1--6",
editor = "Mohamed, {Mohd Ambri} and Berhanuddin, {Dilla Duryha} and Hamzah, {Azrul Azlan}",
booktitle = "Nanomaterials and Nanotechnology for Sustainable Development - Selected peer-reviewed full text papers from the 2nd Nanotechnology Malaysia Biennial Symposium, NanoSym 2021",
address = "瑞士",
}