A technique to grow high-quality GaAs layers on Si(100) substrate by using a novel SiGe buffer structure is proposed. For the growth of this SiGe buffer structure, a 0.8μm Si0.1Ge0.9 layer was first grown. Due to the large mismatch between this layer and the Si substrate, many dislocations formed near the interface and in the low part of the Si 0.1Ge0.9 layer. A 0.8μm Si0.05Ge 0.09 layer and a 1.0μm top Ge layer were subsequently grown. The Si0.05Ge0.95/ Si0.1Ge0.9 and Ge/ Si0.05Ge0.95 interfaces formed can bend and terminate the upward-propagated dislocations very effectively. The in situ annealing process is also performed for each individual layer after growth. Finally a 1-3μm GaAs film was grown by MOCVD at 650□.The experimental results show that the dislocation density in the top Ge and GaAs layers can be greatly reduced, and the surface was kept very smooth after growth, while the total thickness of the structure was kept relative thin after the growth (□3.0μm SiGe buffer struture+3.0μm GaAs layer).
|出版狀態||Published - 5月 2004|
|事件||State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium - San Antonio, TX, United States|
持續時間: 9 5月 2004 → 14 5月 2004
|Conference||State-of-the-Art Program on Compound Semiconductors XL (SOTAPOCS XL) and Narrow Bandgap Optoelectronic Materials and Devices II - Proceedings of the International Symposium|
|城市||San Antonio, TX|
|期間||9/05/04 → 14/05/04|