摘要
GaN has been grown on wet-etched patterned sapphire substrate (PSS) by metal-organic chemical vapor deposition. It has been found that GaN was initiated not only from bottom c-facet but also from E {1235 ¯ } facets of hexagonal patterns /pyramids. In this study, a vacancy-PSS on c-plane sapphire was used to investigate the growth of GaN on the E-like facets (E1 and E2) of distorted pyramids. The results show that the orientation relationship between E1-GaN and sapphire is (1126) ¯GaN // (110 ¯ 2) ¯sapphire and [1121]GaN // [1120] ¯sapphire.
原文 | English |
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頁(從 - 到) | Q68-Q70 |
頁數 | 3 |
期刊 | ECS Journal of Solid State Science and Technology |
卷 | 6 |
發行號 | 5 |
DOIs | |
出版狀態 | Published - 2017 |