Growth of GaN on {1235 ¯ }-like facets of patterned sapphire substrate

Pei Yu Wu, Chien Chih Chen, Chia Yen Huang, Hao-Chung Kuo, Kun Lin Lin, Yew Chung Sermon Wu

研究成果: Article同行評審

1 引文 斯高帕斯(Scopus)

摘要

GaN has been grown on wet-etched patterned sapphire substrate (PSS) by metal-organic chemical vapor deposition. It has been found that GaN was initiated not only from bottom c-facet but also from E {1235 ¯ } facets of hexagonal patterns /pyramids. In this study, a vacancy-PSS on c-plane sapphire was used to investigate the growth of GaN on the E-like facets (E1 and E2) of distorted pyramids. The results show that the orientation relationship between E1-GaN and sapphire is (1126) ¯ GaN // (110 ¯ 2) ¯ sapphire and [1121]GaN // [1120] ¯ sapphire. At the same time, that between E2-GaN and sapphire is (011¯4) ¯ GaN // (330 ¯ 6) ¯ sapphire and [0221] ¯ GaN // [1120]¯ sapphire

原文English
頁(從 - 到)Q68-Q70
頁數3
期刊ECS Journal of Solid State Science and Technology
6
發行號5
DOIs
出版狀態Published - 1 1月 2017

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