Growth of GaAs on SiOx by molecular-beam epitaxy

Albert Chin; Pallab K. Bhattacharya; G. P. Kothiyal

doi:10.1063/1.339855

Growth of GaAs on SiO_x by molecular-beam epitaxy

Albert Chin^*, Pallab K. Bhattacharya, G. P. Kothiyal

^*此作品的通信作者

電子研究所

研究成果: Article › 同行評審

4 引文斯高帕斯（Scopus）

摘要

We have investigated the molecular-beam epitaxial growth and photoluminescence properties of GaAs on SiO_x. It is seen that material with a grain size of 0.6-0.8 μm can be grown directly on the dielectric. The properties improve further when the layers are short-term annealed with a halogen lamp. Optimum grain sizes of 1.6 μm are obtained when the as-grown material is annealed at 950°C for 10 s, and very strong luminescence is observed in the same material. Photoconductive detectors made on the overgrown GaAs show large responsivities.

原文	English
頁（從 - 到）	1416-1419
頁數	4
期刊	Journal of Applied Physics
卷	62
發行號	4
DOIs	https://doi.org/10.1063/1.339855
出版狀態	Published - 1 12月 1987

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AU - Bhattacharya, Pallab K.

AU - Kothiyal, G. P.

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N2 - We have investigated the molecular-beam epitaxial growth and photoluminescence properties of GaAs on SiOx. It is seen that material with a grain size of 0.6-0.8 μm can be grown directly on the dielectric. The properties improve further when the layers are short-term annealed with a halogen lamp. Optimum grain sizes of 1.6 μm are obtained when the as-grown material is annealed at 950°C for 10 s, and very strong luminescence is observed in the same material. Photoconductive detectors made on the overgrown GaAs show large responsivities.

AB - We have investigated the molecular-beam epitaxial growth and photoluminescence properties of GaAs on SiOx. It is seen that material with a grain size of 0.6-0.8 μm can be grown directly on the dielectric. The properties improve further when the layers are short-term annealed with a halogen lamp. Optimum grain sizes of 1.6 μm are obtained when the as-grown material is annealed at 950°C for 10 s, and very strong luminescence is observed in the same material. Photoconductive detectors made on the overgrown GaAs show large responsivities.

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Growth of GaAs on SiOx by molecular-beam epitaxy

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Growth of GaAs on SiO_x by molecular-beam epitaxy