原文 | English |
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專利號 | US 7,259,084 B2 |
出版狀態 | Published - 21 8月 2007 |
GROWTH OF GAAS EPITAXIAL LAYERS ON SI SUBSTRATE BY USING A NOVEL GESI BUFFER LAYER
Chun-Yen Chang (Inventor), Edward Yi Chang (Inventor)
研究成果: Patent
Chun-Yen Chang (Inventor), Edward Yi Chang (Inventor)
研究成果: Patent
原文 | English |
---|---|
專利號 | US 7,259,084 B2 |
出版狀態 | Published - 21 8月 2007 |