Using STM, we have studied a mechanism of Co-2×2 island growth on Ag/Ge(111)-√3×√3 surface. The islands are found to have hcp structure and be oriented with (11-20) face. A model was inferred that the majority of them grow along  crystallographic direction, which in STM images manifests itself by a lateral shift of Co atom rows in the topmost layer compared to that in underlying one.
|主出版物標題||4th IEEE International NanoElectronics Conference, INEC 2011|
|出版狀態||Published - 26 9月 2011|
|事件||4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan|
持續時間: 21 6月 2011 → 24 6月 2011
|名字||Proceedings - International NanoElectronics Conference, INEC|
|Conference||4th IEEE International Nanoelectronics Conference, INEC 2011|
|期間||21/06/11 → 24/06/11|