Growth kinetics of planar binary diffusion couples: "Thin-film case" versus "bulk cases"

U. Gösele*, King-Ning Tu

*此作品的通信作者

研究成果: Article同行評審

506 引文 斯高帕斯(Scopus)

摘要

It is proposed that interfacial reaction barriers in binary A/B diffusion couples lead to the absence of phases predicted by the equilibrium phase diagram, provided that the diffusion zones are sufficiently thin (thin-film case). With increasing thickness of the diffusion zones the influence of interfacial reaction barriers decreases and the simultaneous existence of diffusion-controlled growth of all equilibrium phases is expected (bulk case). Selective growth of the first and second phases and the effect of impurities are discussed with the influence of interfacial reaction barriers and with references to the known cases of silicide formation.

原文English
頁(從 - 到)3252-3260
頁數9
期刊Journal of Applied Physics
53
發行號4
DOIs
出版狀態Published - 1 12月 1982

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