Growth evolution of Si_xN_y on the GaN underlayer and its effects on GaN-on-Si (111) heteroepitaxial quality

Keyphrases

• Si(111) 100%
• GaN-on-Si 100%
• GaN Epilayer 100%
• Heteroepitaxial Structures 100%
• Growth Evolution 100%
• Graded AlGaN 66%
• Metal-organic Chemical Vapor Deposition (MOCVD) 33%
• Field Emission Scanning Electron Microscopy (FE-SEM) 33%
• Auger Electron Spectroscopy 33%
• Rocking Curve 33%
• X Ray Diffraction 33%
• Atomic Force Microscopy 33%
• Transmission Electron Microscopy 33%
• Full Width at Half Maximum 33%
• Si(111) Substrate 33%
• Growth Process 33%
• Nanocrystalline 33%
• AlN Buffer Layer 33%
• Growth Time 33%
• Dislocation Annihilation 33%
• Dislocation Core 33%

Material Science

• Epilayers 100%
• Aluminum Nitride 66%
• X-Ray Diffraction 33%
• Transmission Electron Microscopy 33%
• Chemical Vapor Deposition 33%
• Auger Electron Spectroscopy 33%
• Nanocrystalline 33%
• Field Emission Scanning Electron Microscopy 33%
• Atomic Force Microscopy 33%