Growth and x-ray characterization of an InN film on sapphire prepared by metallorganic vapor phase epitaxy

Wei-Kuo Chen; Yung Chung Pan; Heng Ching Lin; Jehn Ou; Wen Hsiung Chen; Ming Chih Lee

doi:10.1143/JJAP.36.L1625

Growth and x-ray characterization of an InN film on sapphire prepared by metallorganic vapor phase epitaxy

Wei-Kuo Chen^*, Yung Chung Pan, Heng Ching Lin, Jehn Ou, Wen Hsiung Chen, Ming Chih Lee

^*此作品的通信作者

電子物理學系

研究成果: Article › 同行評審

28 引文斯高帕斯（Scopus）

摘要

We report the successful growth of an InN film by metallorganic vapor phase epitaxy. The film quality is found to be strongly dependent on the growth temperature and the TMIn reactant flow rate. The best quality epilayer was obtained at 375°C under a high V/III ratio growth environment. It exhibits a FWHM of the X-ray rocking curve as narrow as 96 arcsec, which explains the superior crystalline quality of our epitaxial film.

原文	English
期刊	Japanese Journal of Applied Physics, Part 2: Letters
卷	36
發行號	12 B
DOIs	https://doi.org/10.1143/JJAP.36.L1625
出版狀態	Published - 1 12月 1997

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AU - Chen, Wei-Kuo

AU - Pan, Yung Chung

AU - Lin, Heng Ching

AU - Ou, Jehn

AU - Chen, Wen Hsiung

AU - Lee, Ming Chih

PY - 1997/12/1

Y1 - 1997/12/1

N2 - We report the successful growth of an InN film by metallorganic vapor phase epitaxy. The film quality is found to be strongly dependent on the growth temperature and the TMIn reactant flow rate. The best quality epilayer was obtained at 375°C under a high V/III ratio growth environment. It exhibits a FWHM of the X-ray rocking curve as narrow as 96 arcsec, which explains the superior crystalline quality of our epitaxial film.

AB - We report the successful growth of an InN film by metallorganic vapor phase epitaxy. The film quality is found to be strongly dependent on the growth temperature and the TMIn reactant flow rate. The best quality epilayer was obtained at 375°C under a high V/III ratio growth environment. It exhibits a FWHM of the X-ray rocking curve as narrow as 96 arcsec, which explains the superior crystalline quality of our epitaxial film.

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M3 - Article

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JO - Japanese Journal of Applied Physics, Part 2: Letters

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Growth and x-ray characterization of an InN film on sapphire prepared by metallorganic vapor phase epitaxy

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