We report the successful growth of an InN film by metallorganic vapor phase epitaxy. The film quality is found to be strongly dependent on the growth temperature and the TMIn reactant flow rate. The best quality epilayer was obtained at 375°C under a high V/III ratio growth environment. It exhibits a FWHM of the X-ray rocking curve as narrow as 96 arcsec, which explains the superior crystalline quality of our epitaxial film.
|期刊||Japanese Journal of Applied Physics, Part 2: Letters|
|出版狀態||Published - 1 12月 1997|