Growth and transport properties of (110)-oriented La2/3Sr1/3MnO3 thin films on TiO2-buffered Si (100) substrates

Shiu Jen Liu; Shyh Feng Chen; Jenh-Yih Juang; Jiunn-Yuan Lin; Kaung-Hsiung Wu; Tseng Ming Uen; Yi Shun Gou

doi:10.1143/jjap.42.l287

Growth and transport properties of (110)-oriented La_2/3Sr_1/3MnO₃ thin films on TiO₂-buffered Si (100) substrates

Shiu Jen Liu^*, Shyh Feng Chen, Jenh-Yih Juang, Jiunn-Yuan Lin, Kaung-Hsiung Wu, Tseng Ming Uen, Yi Shun Gou

^*此作品的通信作者

研究成果: Letter › 同行評審

2 引文斯高帕斯（Scopus）

摘要

The growth and transport properties of (110)-oriented La_2/3Sr_1/3MnO₃ thin films on TiO₂-buffered silicon substrates by pulsed-laser deposition are reported. An insulator-metal transition associated with a ferromagnetic transition was observed at about 360 K. Magnetic measurements showed that in-plane coercive fields are about 60 Oe and 300 Oe at 300 K and 5 K. respectively. A magnetoresistance with a Δρ/ρ(H = 0) ratio of -20% in a magnetic field of 5 T was observed not only near the insulator-metal transition temperature but also below 30 K. Moreover, a T²- to T³-dependence crossover of resistivity was observed around 60 K, indicating that an unconventional one-magnon scattering may have occurred.

原文	American English
頁（從 - 到）	L287-L290
頁數	4
期刊	Japanese Journal of Applied Physics, Part 2: Letters
卷	42
發行號	3 B
DOIs	https://doi.org/10.1143/jjap.42.l287
出版狀態	Published - 15 3月 2003

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10.1143/jjap.42.l287

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@article{e6b1702122e347bfb68359b9898c66f1,

title = "Growth and transport properties of (110)-oriented La2/3Sr1/3MnO3 thin films on TiO2-buffered Si (100) substrates",

abstract = "The growth and transport properties of (110)-oriented La2/3Sr1/3MnO3 thin films on TiO2-buffered silicon substrates by pulsed-laser deposition are reported. An insulator-metal transition associated with a ferromagnetic transition was observed at about 360 K. Magnetic measurements showed that in-plane coercive fields are about 60 Oe and 300 Oe at 300 K and 5 K. respectively. A magnetoresistance with a Δρ/ρ(H = 0) ratio of -20% in a magnetic field of 5 T was observed not only near the insulator-metal transition temperature but also below 30 K. Moreover, a T2- to T3-dependence crossover of resistivity was observed around 60 K, indicating that an unconventional one-magnon scattering may have occurred.",

keywords = "Buffer layer, Colossal magnetoresistance, Hole-doped manganite, Insulator-metal transition, One-magnon scattering, Pulsed-laser deposition, Titanium dioxide, Transport properties",

author = "Liu, {Shiu Jen} and Chen, {Shyh Feng} and Jenh-Yih Juang and Jiunn-Yuan Lin and Kaung-Hsiung Wu and Uen, {Tseng Ming} and Gou, {Yi Shun}",

year = "2003",

month = mar,

day = "15",

doi = "10.1143/jjap.42.l287",

language = "American English",

volume = "42",

pages = "L287--L290",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "3 B",

}

TY - JOUR

T1 - Growth and transport properties of (110)-oriented La2/3Sr1/3MnO3 thin films on TiO2-buffered Si (100) substrates

AU - Liu, Shiu Jen

AU - Chen, Shyh Feng

AU - Juang, Jenh-Yih

AU - Lin, Jiunn-Yuan

AU - Wu, Kaung-Hsiung

AU - Uen, Tseng Ming

AU - Gou, Yi Shun

PY - 2003/3/15

Y1 - 2003/3/15

N2 - The growth and transport properties of (110)-oriented La2/3Sr1/3MnO3 thin films on TiO2-buffered silicon substrates by pulsed-laser deposition are reported. An insulator-metal transition associated with a ferromagnetic transition was observed at about 360 K. Magnetic measurements showed that in-plane coercive fields are about 60 Oe and 300 Oe at 300 K and 5 K. respectively. A magnetoresistance with a Δρ/ρ(H = 0) ratio of -20% in a magnetic field of 5 T was observed not only near the insulator-metal transition temperature but also below 30 K. Moreover, a T2- to T3-dependence crossover of resistivity was observed around 60 K, indicating that an unconventional one-magnon scattering may have occurred.

AB - The growth and transport properties of (110)-oriented La2/3Sr1/3MnO3 thin films on TiO2-buffered silicon substrates by pulsed-laser deposition are reported. An insulator-metal transition associated with a ferromagnetic transition was observed at about 360 K. Magnetic measurements showed that in-plane coercive fields are about 60 Oe and 300 Oe at 300 K and 5 K. respectively. A magnetoresistance with a Δρ/ρ(H = 0) ratio of -20% in a magnetic field of 5 T was observed not only near the insulator-metal transition temperature but also below 30 K. Moreover, a T2- to T3-dependence crossover of resistivity was observed around 60 K, indicating that an unconventional one-magnon scattering may have occurred.

KW - Buffer layer

KW - Colossal magnetoresistance

KW - Hole-doped manganite

KW - Insulator-metal transition

KW - One-magnon scattering

KW - Pulsed-laser deposition

KW - Titanium dioxide

KW - Transport properties

UR - http://www.scopus.com/inward/record.url?scp=0037762594&partnerID=8YFLogxK

U2 - 10.1143/jjap.42.l287

DO - 10.1143/jjap.42.l287

M3 - Letter

AN - SCOPUS:0037762594

SN - 0021-4922

VL - 42

SP - L287-L290

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 3 B

ER -

Growth and transport properties of (110)-oriented La2/3Sr1/3MnO3 thin films on TiO2-buffered Si (100) substrates

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Growth and transport properties of (110)-oriented La_2/3Sr_1/3MnO₃ thin films on TiO₂-buffered Si (100) substrates