Growth and dielectric properties of Pb(ScTa)1-xTi xO3 (PSTT) thin films by MOCVD method

Chun-Hsiung Lin*, Philip A. Friddle, Cheng Hsin Ma, Haydn Chen

*此作品的通信作者

研究成果: Article同行評審

摘要

Highly (002) textured Pb(ScTa)1-xTixO 3(PSTT) (with composition x = 0 - 0.3) thin films were deposited using metal-organic chemical vapor deposition (MOCVD) technique at temperature ranging from 600°C to 685°C. Dielectric properties of these PSTT thin films showed strong dependency on the growth temperature and PT content. Ti addition acted as a "Curie" temperature shifter, moving T max from -10 to 120°C with the dielectric constant peak value increasing from 1397 to 1992 (measured at 1 kHz) when composition x went from 0 to 0.3. Loss tangent values were generally below 0.025. For PSTT thin films with composition near its morphotropic boundary (x = 0.3), the room temperature dielectric constants increased from 980 to around 1600 as the growth temperature increased from 650 to 685°C. In addition, the dielectric dispersion behaviors of films grown at different temperatures were compared.

原文English
頁(從 - 到)1-6
頁數6
期刊Tamkang Journal of Science and Engineering
5
發行號1
DOIs
出版狀態Published - 3月 2002

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